International Business Machines Corporation

Lockheed Martin Corporation

David S O'Grady

William John Adair

Lars W Liebmann

Song Peng

Richard A Ferguson

Michael Straight Hibbs

Scott Marshall Mansfield

Timothy E Neary

Jacek G Smolinski

Alfred K Wong

Brian J Grenon

Stanislav P Bajuk

Steven D Flanders

Denis Marc Rigaill

Willam C Joyce

Edward T Smith

Karen Marie Badger

Denis M Rigaill

Jean T Ohlson

James J Lynch

A photolithographic mask comprises a first plurality of image segments etched into a mask substrate to a first level imparting a predetermined phase shift with respect to electromagnetic radiation of a predetermined frequency, preferably a 90&deg; phase shift, and a second plurality of image segments etched into the mask substrate to a second level imparting a phase shift of 180&deg; more or less than the phase shift of the first plurality of image segments with respect to the predetermined electromagnetic radiation, preferably a 270&deg; phase shift. The first and second segments are disposed adjacent each other on a substrate and positioned such that an intersection of the predetermined electromagnetic radiation passing through the segments causes printable images to be created below the substrate when exposed to the predetermined electromagnetic radiation. The mask may further include a blocking material for the electromagnetic radiation, adjacent at least one of the first and second segments or regions, of a configuration adapted to cause a printable image to be created below the mask when exposed to the predetermined electromagnetic radiation.

Method of making a twin alternating phase shift mask

The present invention provides a method and an apparatus for tuning the phase shifting of a phase shift mask having an attenuating phase shifting material providing at least 160.degree. of phase shift. The method comprising the utilization of a phase measurement and selective etching operations which reduces the challenge of making an exacting 180.degree. phase shifting mask. An attenuated phase shift mask structure is also disclosed in the present invention.

Apparatus for tuning an attenuating phase shift mask

A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.

Multiple polarity mask exposure method

A method for detection of a photomask defect. The method comprises the steps of applying a contrast-enhancing coating on the photomask and optically inspecting the photomask for defects. The contrast-enhancing coating may be copper, aluminum, molybdenum silicide, or any material capable of altering the reflectivity or transmissivity of defects.

Surface coating method to highlight transparent mask defects

Method for tuning an attenuating phase shift mask

A method and system for detecting defects in the design of a photolithographic mask or a printed wafer. It derives an adaptive inspection algorithm that allows for a tighter inspection of a mask to a data set which has repeatable differences. The inspection should allow flexibility to remove un-important differences while maintaining a tight inspection capability.

Adaptive inspection method and system

A two-step method for eliminating transmission errors in alternating phase-shifting masks is described. Initially, the design data is selectively biased to provide a coarse reduction in the inherent transmission error between features of different phase, size, shape, and/or location. During fabrication of the mask with the modified data, residual transmission errors are then eliminated via the positioning of the edges of the etched-quartz trenches which define the phase of a given feature to a set location beneath the opaque chrome film. Application of feedback, in which the aerial image of the mask is monitored during the positioning of the etched-quartz edges, provides additional and precise control of the residual transmission error.

Exact transmission balanced alternating phase-shifting mask for

A lithographic patterning method and mask set using a phase shift trim mask having mask dimensions increased in block size so as to remove previous exposure defects.

Lithographic patterning method and mask set therefor with light field

A method of forming a substantially defect-free mask for optical and phase-shift lithography. The method involves depositing a transfer layer on a mask layer deposited on a transmissive substrate, forming in the transfer layer a mask image to be defined in the mask layer, inspecting the image formed in the transfer layer, repairing the image formed in the transfer image, and transferring the corrected image from the transfer layer into the mask layer. The repair of the transfer layer is accomplished by removing unwanted portions of the transfer layer followed by filling any unwanted voids therein with a selected material. Preferably, the fill material has the same desirable etching and/or optical characteristics as the surrounding transfer layer. However, any material that is substantially opaque to the radiation used to transfer the image from the transfer layer to the mask layer can be successfully employed.

Lithographic mask repair and fabrication method

An attenuating, phase-shift, semiconductor fabrication mask having recessed attenuating and phase-shifting regions that is not susceptible to phase defects in the printing regions of the mask. This desirable result is accomplished by not altering the surface of the fully transmissive regions of the mask and by recessing the attenuating regions of the mask relative to the fully transmissive regions. A method of forming the recessed attenuated phase-shift mask is also included. The process begins by forming recesses in the regions of the mask substrate where phase-shifting is desired and back filling these recessed regions with a selected thickness of attenuating material so that the attenuation effect of the deposited material together with the depth of the recess co-act to shift the light approximately 180.degree. (.pi. radians) from the light transmitted through the adjacent transmissive regions of the mask to create by destructive interference a sharp delineation at the edges of the projected mask image.

Attenuating phase-shift mask structure and fabrication method

A method of forming rim type phase-shift lithography mask (140) involving backside overexposure of a positive resist layer (130) overlying a patterned light-blocking layer (120). By subjecting the resist layer to electromagnetic radiation (132) (e.g., broad band UV) transmitted via the backside (115) of the mask substrate (112), portions (134) of the resist layer extending from peripheral edges of the light blocking layer inwardly a selected distance are activated. After developing activated portions of the resist layer, the 'pull back' of the resist layer is transferred to the underlying light blocking layer by anisotropically etching portions of the light blocking layer not covered by the resist layer, thereby forming the desired rim structure.

Growing community of inventors

Jericho, VT, United States of America

David S O'Grady