Applied Materials, Inc.

Lam Research Corporation

Lam Research Ag

Other

David S Mui

Wei Liu

Ji Zhu

Arjun Mendiratta

Jeffrey D Chinn

Michael Ravkin

Dragan Valentin Podlesnik

Butch Berney

Scott M Williams

Timothy Weidman

Mark Naoshi Kawaguchi

Olivier Joubert

Dian Sugiarto

Stephen Yuen

Hiroki Sasano

Nathan Musselwhite

Alois Goller

Cedric Monget

Ajay Kumar

Thorsten B Lill

Shaoher X Pan

Gerald Z Yin

Mike Ravkin

Xikun Wang

Meihua Shen

Michael N Grimbergen

Mark Henry Wilcoxson

Shashank C Deshmukh

Xue-Yu Qian

Cheng-Yu Lin

Gene S Lee

Ming-Hsun Yang

Karl-Heinz Hohenwarter

Ilia Kalinovski

Jeff Chinn

Weinan Jiang

Nam-Hun Kim

Zhi-wen Sun

Shih-Chung Kon

Bhaskar Bandarapu

Alok Jain

Arthur Y Chen

Rafal Ryszard Dylewicz

Grant Peng

Hongbo Si

Bernhard Loidl

Christian Putzi

Ming-Hsun Kuo

Robert Johnson

Michelle Siew Mooi Low

Gang Zou

Nathan Lavdovsky

Gerome Michel Dominique Melaet

Michael Klemm

A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.

Vapor cleaning of substrate surfaces

A vapor delivery head for wet treatment of a substrate includes a body including an upper surface, a lower surface, an upper plenum and a lower plenum. A first bore is arranged on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid. A second bore is arranged on the upper surface of the body and connected to the upper plenum to remove heated fluid. A third bore is arranged on the upper surface of the body and connected to the lower plenum to receive a gas mixture. A plurality of through holes through the lower surface of the body are in fluid communication with the lower plenum.

Vapor delivery head for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures

A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures

An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.

Method and apparatus for processing wafer-shaped articles

A method for drying wafer-shaped articles comprises rotating a wafer-shaped article of a predetermined diameter on a rotary chuck, and dispensing a drying liquid onto one side of the wafer-shaped article. The drying liquid comprises greater than 50 mass % of an organic solvent. During at least part of the dispensing step, the wafer-shaped article is heated with a heating assembly. During at least part of the dispensing step a fluorine-containing compound is present in the drying liquid or in a gas that surrounds the drying liquid as the drying liquid contacts the wafer-shaped article.

Apparatus and methods for removing particle contaminants from a solid surface includes providing a layer of a viscoelastic material on the solid surface. The viscoelastic material is applied as a thin film and exhibits substantial liquid-like characteristics. The viscoelastic material at least partially binds with the particle contaminants. A high velocity liquid is applied to the viscoelastic material, such that the viscoelastic material exhibits solid-like behavior. The viscoelastic material is thus dislodged from the solid surface along with the particle contaminants, thereby cleaning the solid surface of the particle contaminants.

Method of particle contaminant removal

An apparatus for processing a substrate, comprising: a process chamber having a track; a carrier connected to the track; upper and lower proximity heads in the chamber and positioned along the path, the proximity heads having opposing faces that define a gap in which a meniscus of fluid is formed, the path being defined along the gap between the opposing faces; a first pre-wet dispenser and a second pre-wet dispenser disposed along side of the upper proximity head and directed toward the path; a drive for moving each of the pre-wet dispensers between a center position along the length of the upper proximity head and opposite outer positions near outer ends of the upper proximity head; and a pre-wet controller for causing the drive to move each of the first and second pre-wet dispensers based on a position of the carrier when moved under the first and second pre-wet dispensers.

Apparatus and methods for processing a substrate

A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.

Method and apparatus for removing contaminants from substrate

An apparatus is provided that includes a substrate support assembly for holding the semiconductor substrate and a dispense head for applying a cleaning material to clean the contaminants from the substrate surface. The dispense head extends across a length of the semiconductor substrate and is positioned proximate to the substrate surface at a distance of between about 0.1 mm and about 4.5 mm. The proximate position enables application of a force to the cleaning material as it is applied to the substrate surface as a film, and the cleaning material provided through the dispense head contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound, each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, the plurality of solid components and the polymers are dispersed for application through the dispense head.

Apparatus for application of two-phase contaminant removal medium

A method for cleaning a substrate is provided that includes applying a liquid medium to a surface of the substrate such that the liquid medium substantially covers a portion of the substrate that is being cleaned. One or more transducers are used to generate acoustic energy. The generated acoustic energy is applied to the substrate and the liquid medium meniscus such that the applied acoustic energy to the liquid medium prevents cavitation within the liquid medium. The acoustic energy applied to the substrate provides maximum acoustic wave displacement to acoustic waves introduced into the liquid medium. The acoustic energy introduced into the substrate and the liquid medium enables dislodging of the particle contaminant from the surface of the substrate. The dislodged particle contaminants become entrapped within the liquid medium and are carried away from the surface of the substrate by the liquid medium.

Acoustic assisted single wafer wet clean for semiconductor wafer process

A method is provided for receiving the wafer on a support, the support being configured for movement along a direction. While moving the wafer, dispensing a cleaning material to clean contaminants from the surface of the wafer, the dispensing applied as a film over a diameter length of the wafer. The cleaning material contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound. Each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, and wherein the polymers become soluble in the cleaning liquid and the solubilized polymers having long polymer chains that capture and entrap solid components and contaminants in the cleaning liquid. Then, rinsing the film off of the wafer with a rinsing meniscus. The rinsing meniscus applied along the diameter length of the wafer and the film is rinsed after the dispensing.

Methods for application of two-phase contaminant removal medium

The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency.

Composition of a cleaning material for particle removal

The embodiments provide substrate cleaning techniques to remove contaminants from the substrate surface to improve device yield. The substrate cleaning techniques utilize a cleaning material with solid components and polymers with a large molecular weight dispersed in a cleaning liquid to form the cleaning material, which is fluidic. The solid components remove contaminants on the substrate surface by making contact with the contaminants. The polymers with large molecular weight form polymer chains and a polymeric network that capture and entrap solids in the cleaning materials, which prevent solids from falling on the substrate surface. In addition, the polymers can also assist in removing contaminants form the substrate surface by making contacts with contaminants on the substrate surface. In one embodiment, the cleaning material glides around protruding features on the substrate surface without making a forceful impact on the protruding features to damage them. The present invention can be implemented in numerous ways, including a material (or solution), a method, a process, an apparatus, or a system.

Composition and application of a two-phase contaminant removal medium

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San Jose, CA, United States of America

David S Mui