Sperry Corporation

Sperry Rand Corporation

Unisys Corporation

Other

David S Lo

Maynard C Paul

Leslie H Johnson

Ernest J Torok

Gregory J Cosimini

Roger W Honebrink

Lawrence G Zierhut

George F Nelson

Stanley J Lins

Christopher Paul Henze

Hubert C Martin, Jr

Joseph H Mulkern

The present invention relates generally to adjustable headwear in the form of caps or visors which are adjustable to fit wearers with a range of head sizes. In particular, the cap or visor is constructed of a uni-axially stretchable material with a sweatband around the inside periphery of the cap or visor constructed of a bi-axially stretchable material. Attached to the front of the headwear is a bill, a rigid structure that shields the wearer's eyes and is arched in the preferred embodiment.

Adjustable headwear

A DC to DC power converter is implemented which includes an input switching circuit, an input capacitor, a transformer and an output rectifying switching circuit coupled to the transformer. The input switching circuit consists of a minimum of four transistors which are operated in a timed relationship such that bi-directional currents are developed in both primary windings. The output rectifying switching circuit is operated with switching transistors that provide zero-voltage resonant transition (ZVRT) switching. Timing relationships between the input signals control the ZVRT with switching of the transistors. Bidirectional currents in the primary windings of the single transformer element permit a reduction in volume of the magnetic element and the coils of the transformer for a given level of output power. Overall, converter volume for a given output power is thereby sufficiently reduced to allow a power converter to be mounted on a circuit board, which enables a practical embodiment of a distributed power processing system.

Interleaved bridge converter

A single-ended DC-to-DC power converter which is operative at very high switching frequencies with zero-voltage resonant transition switching. A single magnetic element functions as both a storage inductor and a transformer. A charging capacitor is switched to induce a reversal current through the inductor for providing the zero-voltage switching function. Control to output characteristics are identical to those of conventional buck and buck-boost converters. The invention provides efficient, high-frequency operation and isolation of the output from the input power source with minimal component volume. The control system is adaptable to constant frequency pulse width modulation for voltage regulation.

Zero-voltage resonant transition switching power converter

Stabilization of the propagation of storage bits around the storage loops of a Vertical Bloch Line (VBL) memory is obtained by the vapor-deposition of a nickel-iron film over the VBL structure. The film has a composition range of 65-90% nickel and a thickness of 1,000 to 10,000 Angstroms, and is deposited in a vacuum of 10.sup.-4 to 10.sup.-6 Torr to provide parallel, periodic, magnetic stripe domains, and thus potential well domains, that have a periodicity in the range of 0.1 to 1 micron. The stripe domains are oriented perpendicular to the direction of data propagation and form potential wells along the elongated direction of the storage loops.

Propagational control for Vertical Bloch Line memories

The memory system incorporates a memory element storing binary digital data in the presence, vel non, of a Y-domain cross-tie. The memory element has a planar contour that is substantially symmetrical about a longitudinal axis and that has edge portions that are nowhere perpendicular or parallel to the longitudinal axis. A stabilizing magnetic field applied perpendicular to the longitudinal axis and in the plane of the memory element forms a first Neel wall along the longitudinal axis and causes the magnetization in the memory element to be formed into first and second domains on opposite sides of the Neel wall. When a writing magnetic field oriented in the plane of the memory element and perpendicular to the longitudinal axis but opposite to the stabilizing magnetic field orientation is coupled to the memory element, there is formed in the memory element a third domain separated from the first and second domains by second and third Neel walls having a join with one end of the first Neel wall. The first, second and third Neel walls form a 'Y'. Because of the nature of this third domain having its magnetization oriented in a direction parallel to the readout current caused to pass through the memory element, it produces a significantly greater difference in the readout signal between the readout of a stored 1 and a stored 0 than that achieved with the prior art cross-tie wall memory element.

Y-domain magnetic memory system

A nondestructive readout, random access memory system is disclosed. The memory is formed of a plurality of discrete thin ferromagnetic film memory elements in which binary data are stored as the presence, or absence, of cross-tie, Bloch-line pairs. Column lines and row lines form a matrix array of the memory elements, one at each column line, row line intersection. Cross-tie, Bloch-line pairs are formed in the memory elements by the selective coincidence of row line and column line write drive fields while readout of the presence, or absence, of the cross-tie, Bloch-line pair is by a coincident row line read drive field and a column read current signal that flows through the memory elements aligned along a selected column. A read amplifier is differentially coupled across the one fully selected memory element to detect a first, or second, opposite polarity output signal that is indicative of the presence, or absence, of a cross-tie, Bloch-line pair at the one fully selected memory element.

Nondestructive readout, random access cross-tie wall memory system

An improved magnetic memory system in which binary data are stored as cross-tie, Bloch-line pairs, which are serially propagated downstream along a cross-tie wall in a magnetizable layer by appropriate drive fields. The magnetizable layer is configured into a data track whose two opposing edges are formed into patterns of asymmetrically shaped edges which form successive narrow portions with wide portions therebetween, and which are formed about the geometric centerline of the data track. The improvement comprises forming a plurality of energy wells along the geometric centerline of the data track and, transverse to the geometric centerline of the data track in the areas of the narrow portions where the cross-ties are stored but not in the areas of the geometric centerline.

Data track for cross tie wall memory system

An improved magnetic memory system in which binary data are stored as cross-tie, Bloch-line pairs, which are serially propagated downstream along a cross-tie wall and a magnetizable layer by appropriate drive fields. The magnetizable layer is configured into a data track whose two mirror-image, opposing edges are formed into patterns of asymmetrically shaped edges which form successive narrow portions, or necks, with wide portions therebetween, and which shaped edges are formed about the geometric central line of the data track. The cross-ties are structured in the data track by opposite-edge necks at which the ends of the cross-tie are magnetically stable. The improvement comprises:

Cross-tie propagation using offset serration and cross-tie rocking action

Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic data track. The system includes a three-level shift register structure comprised of the following layers: first and second substantially similar, serrated-edged current conductive striplines and a serrated-edged thin magnetic layer data track. The shift register is terminated on one end by a cross-tie, Bloch-line pair generator and on the other end by a cross-tie detector. A data word is stored in the data track between the generator and the detector and is shifted through the detector for readout of the stored data word. The first and second serrated-edged striplines are formed of alternate wide-narrow portions with the wide portion of one stripline oriented above/below the narrow portion of the other stripline. Current signals alternatively coupled to the first and second striplines generate drive fields of differing intensities in the plane of the inductively coupled data track for propagating the cross-tie, Bloch-line pairs therealong.

Generator/shift register/detector for cross-tie wall memory system

Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-level structure comprised of the following superposed layers: a straight-edged current conductive stripline; a serrated-edged thin magnetic layer data track, and a wide-narrow-edged current conductive stripline terminated on one end by a cross-tie, Bloch-line pair generator. A cross-tie detector is positioned intermediate the ends of the data track and is sandwiched between the data track and the wide-narrow-edged current conductive stripline. An N-bit data word is stored in the data track between the generator and the detector, is shifted through the detector for readout of the stored data word and is then restored into its original stored position by being shifted in a reverse manner along the data track and back through the detector.

Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-level structure comprised of the following superposed layers: a straight-edged current conductive stripline; a serrated-edged thin magnetic layer data track, and a wide-narrow-edged current conductive stripline terminated on one end by a cross-tie, Bloch-line pair generator and on the other end by a cross-tie detector.

Symmetrical memory plane for cross-tie wall memory system

A method of and a detector for magneto-resistively reading out the information that is stored in a cross-tie wall memory system. The detector includes two current conductive elements that are positioned along and across the cross-tie wall in a magnetic film that is configured into a data track for sandwiching a plurality of memory cells therebetween. A separate current conductive element is centered over each of the sandwiched memory cells for conducting the read current drive signal out of the data track in the area of the Bloch-line, but forcing the read current drive signal through the data track in the area of the cross-tie. A stored binary 1, represented by a cross-tie, Bloch-line pair, is propagated into one end of the detector and is replicated in all of the sandwiched memory cells; conversely, a stored binary O, represented by the absence of a cross-tie, Bloch-line pair, would be replicated in all of the sandwiched memory cells. The passage of a read current drive signal between the two conductive elements would, by a magneto-resistive readout, indicate the presence, or absence, of the cross-tie, Bloch-line pairs.

Magneto-resistive detector for cross-tie wall memory system

A method of and an apparatus for counting is disclosed. The counter includes a generator of cross-tie, Bloch-line pairs and a shift register of N stages or memory cells along which the cross-tie, Bloch-line pairs are propagated or replicated into a detector. The method includes coupling a series of bipolar push-nucleate replicate signals, each one of which produces a cross-tie, Bloch-line pair in the adjacent downstream memory cell along the shift register. When the shift register is filled, a cross-tie will appear in the detector. This provides an output signal indicating that the N memory cells have been filled by the N replicate signals.

Counter for cross-tie wall memory system

A method of and an apparatus for reading out the information that is stored in a magnetizable layer that is formed of a thin film in which data are stored as inverted Neel wall sections about associated Bloch-lines along a cross-tie wall. The apparatus utilizes a magnetizable layer which is configured into a strip whose two opposing edges are, along its longitudinal axis, formed into mirror-imaged, spaced-apart, repetitive, asymmetrically-shaped patterns which repetitive patterns are formed of successive narrow portions that form wide portions therebetween. The repetitive patterns, when suitable magnetic fields are coupled thereto, form a cross-tie wall along the longitudinal axis of the strip while structuring the cross-ties along the cross-tie wall at the narrow portions and the Bloch-lines along the cross-tie walls and between the adjacent narrow portions. One of the repetitive patterns is configured into a sharp film whose longitudinal axis is transverse the strip's longitudinal axis and whose transverse axis is along the strip's longitudinal axis. The sharp film, in the area extending beyond the strip's two opposing edges, comprises an open flux path film that possesses the characteristic of shape anisotropy providing a magnetic easy axis that is generally oriented along the sharp film's longitudinal axis and along which the sharp film's remanent magnetization resides wherein for all points on the sharp film's edge the angle .beta.' between the sharp film's edge and the sharp film's longitudinal axis is equal to or greater than 0.degree. and less than 45.degree.. Also disclosed is a detector that is associated with the sharp film for reading out the orientation of the sharp film's remanent magnetization along the sharp film's easy axis.

Cross-tail sensor for cross-tie memory

An apparatus for and a method of optically recording or writing data into a thermoplastic layer is disclosed. The recording medium is fabricated as an integral part of the face of a cathode ray tube (CRT) and includes a layer of thermoplastic material that is thermoplastically responsive to a heating light beam having a wavelength within the infrared (IR) range and that is a dielectric capable of storing charges corresponding to a data-containing charging (electron) beam. The thermoplastic layer is first selectively exposed to the charging (electron) beam for spatially selectively electrically charging the exposed surface of the thermoplastic layer and is then softened by the heating (IR) beam causing the charged, softened surface to distort under the forces of the data-bearing charge. An additional heat conductive layer, which is non-responsive to the heating (IR) beam, ensures fast heat transfer of the heat in the thermoplastic layer to a cooperating, coolant controlled heat sink, both of which combine to provide rapid cooling of the heat exposed portion. This ensures a short-duration, erase-write-read cycle.

Growing community of inventors

Burnsville, MN, United States of America

David S Lo