Hypernex, Inc.

Advanced Technology Materials, Inc.

The Penn State Research Foundation

International Business Machines Corporation

David S Kurtz

Paul R Moran

Krzysztof J Kozaczek

Roger Isaac Martin

Kenneth Parker Rodbell

Sandra Guy Malhotra

Patrick W Dehaven

Clay O Ruud

Ward C Stevens

Kryzsztof J Kozaczek

An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.

Method and apparatus for thin film thickness mapping

An apparatus and method for performing rapid grain size analysis on a textured polycrystalline material, by generating average grain size and grain size distribution data from x-ray diffraction data of such material. Raw diffraction data is obtained by capturing a plurality of diffraction arcs within a single data capture frame. The raw diffraction data is digitally registered; () and the registered diffraction data is filtered to remove background noise, exclude diffraction overlaps or truncations, and compensate for biased data obtained from regions of highly preferred orientations. Average grain size and grain size distribution data are then correlated with the filtered diffraction data. The apparatus for acquiring raw diffraction data includes a collimated x-ray source having means for adjusting beam size and divergence of the x-ray generated, a 2-dimensional area detector for registering diffracted x-ray, and a sample motion assembly for moving the sample in the sample plane. The resulting system is fast, accurate, amenable to automation, and does not require highly skilled personnel to operate.

Method and apparatus for rapid grain size analysis of polycrystalline materials

An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film, is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.

A method for quantitatively determining the phase composition of a sample mixture that comprises two or more textured polycrystalline materials, based on corrected and integrated x-ray diffraction intensities. The effect of texture has been analytically eliminated from such corrected and integrated x-ray diffraction intensities, based on the texture information obtained from the sample mixture.

Method and apparatus for quantitative phase analysis of textured polycrystalline materials

An apparatus and method for performing rapid, high-resolution polycrystalline crystallographic texture analysis, by calculating an Orientation Distribution Function (ODF) from partial pole figures obtained from x-ray diffraction measurements on large samples, e.g., 200 millimeter diameter wafers. The measurement apparatus includes a 2-D area x-ray detector and a collimated x-ray source arranged in a specific, fixed spatial relationship dependant on the properties of the sample to be measured, and also includes a particular wafer motion assembly. The wafer motion assembly includes three mutually orthogonal rectilinear translation stages, and a &phgr; rotation stage mounted thereon, as an uppermost motion stage, with its range restricted to 180&deg; of rotation. &thgr;-2&thgr; and &khgr; motions are eliminated, and the close deployment of the x-ray source and area detector to the measuring spot on the wafer is such that the detector covers a sufficient range of 2&thgr; and &khgr; to capture multiple diffraction arcs in each frame. The invention employs a new and advantageous texture analysis protocol to determine ODF from the severely truncated pole figures thus obtained, through comparison of experimental ODF figures with calculated ones. The resulting system is fast, accurate, amenable to automation, and does not require highly skilled personnel to operate.

Apparatus and method for texture analysis on semiconductor wafers

An x-ray diffraction system for determining stress in integrated circuit materials includes a source of x-rays (3) that are directed toward a sample holding mechanism for diffracting from the test sample (8). An x-ray detector (14) is arranged for detecting high back reflected diffracted x-ray intensity data representing stress in the test sample. A two-dimensional detection and storage arrangement (24) is arranged for detecting and storing the data representing stress in the test sample. A data processor (2) accesses the stored data from the two-dimensional detection and storage arrangement and processes the data representing stress in the test sample to determine stress in the test sample.

Photo-sensor fiber-optic stress analysis system

An apparatus for making rapid in-situ thermal stress measurements includes a controlled atmosphere test chamber for receiving and holding a test sample, and a heating zone within the test chamber confined to the near vicinity of the test sample. A test sample holder, a test sample heater, an x-y translation stage and a rotating stage are mounted within the test chamber. An X-ray source is positioned for producing an incident X-ray beam directed at the test sample from different inclination angles. The incident X-ray beam passes through a long but narrow X-ray window in the test chamber, diffracts from the test sample back through the same X-ray window and continues outside of the chamber to an X-ray detector. The diffracted X-ray beam is converted to light. The light is transmitted through optical fibers and is detected by a CCD array. The invention uses an advantageous scintillation material and a slow scan, fiber-optic compatible CCD photo-sensor array. This photo-sensor array enables the use of a long active detector along the 2.theta. arc and a long working distance between the test sample and the detector.

Apparatus for rapid in-situ X-ray stress measurement during thermal

A method and apparatus for x-ray measurement of certain properties of a solid material. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution. Further, the prohibitively expensive coupling together of a large number of individual linear diode photodetectors, which would be required to process signals generated by the diffracted radiation, is avoided.

Large angle solid state position sensitive x-ray detector system

A superconducting composite material comprising a superconducting element, coated on its exterior surface with noble or inert metal, in a conductive metal matrix which includes nonsuperconducting fibers. The superconducting element may suitably comprise a filament of 123 metal oxide high temperature superconductor (MOHTSC) material, or other metal oxide superconductive material. The composite structure of the invention overcomes the inherent brittleness of metal oxide-type superconductive materials and the sensitivity to flaws to which MOHTSC materials are suceptible. The noble or inert metal and conductive matrix metal may suitably be applied by MOCVD techniques. A preferred form of the superconducting article of the present invention is a tape comprising a generally planar array of superconductive filaments, for applications such as energy storage devices, power transmission and propulsion systems that require large magnetic fields, transformers, motors, and generators. Also disclosed are a method and apparatus for applying a liquid organometallic compound in atomized form to a substrate which is heated to sufficient temperature to decompose the applied organometallic compound and yield a film of deposited metal on the substrate.

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State College, PA, United States of America

David S Kurtz