Cymer, Inc.

USA As Represented by Secretary of the Navy

Tcz Pte. Ltd.

David S Knowles

William N Partlo

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Richard L Sandstrom

Richard M Ness

Richard C Ujazdowski

Herve A Besaucele

Daniel J W Brown

Eckehard D Onkels

William G Hulburd

Palash P Das

David Wayne Myers

Scott T Smith

Stuart L Anderson

Jeffrey Oicles

German E Rylov

Scot T Smith

Stephen H Lieberman

Leonard J Martini

Brandon A Turk

Tibor Juhasz

Tom A Watson

Holger Muenz

Vitaliy Shklover

Robert G Ozarski

Daniel Anthony Rothweil

James H Azzola

Gregory A Theriault

David W Meyers

Plash P Das

Albert P Cefalo

In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive 'shots' rom the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs. The special laser profile used in accordance with the systems and methods described herein can increase the step size and thereby increase throughput and reduce costs.

Systems and method for optimization of laser beam spatial intensity profile

A thin beam directional crystallization system configured to process a substrate comprises a laser configured to produce laser light, the laser configured to have a high energy mode and a low energy mode. The high energy mode is configured to produce light energy sufficient to completely melt a substrate coated with amorphous silicon film, while the low energy mode is configured to produce light energy that is not sufficient to completely melt a substrate coated with amorphous silicon film. The system further comprises beam shaping optics coupled to the laser and configured to convert the laser light emitted from the laser into a long thin beam with a short axis and a long axis, a stage configured to support the substrate and film, and a translator coupled with the stage, the translator configured to advance the substrate and film so as to produce a step size in conjunction with the firing of the laser.

Systems and methods are disclosed for shaping laser light as a line beam for interaction with a film that may have an imperfect, non-planar surface. The system may include a beam stop that defines an edge; a sensor that measures a distance between a selected point on a surface of the film and a reference plane and generates a signal representative of the measured distance; and an actuator coupled to the beam stop and responsive to the signal to move a portion of beam stop edge. Movement of the beam stop edge portion shifts a corresponding portion of the focused line beam in a direction normal to the reference plane to produce a line beam that more closely conforms to the surface profile of the film.

Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations

An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.

Very narrow band, two chamber, high rep-rate gas discharge laser system

Systems and methods are disclosed for shaping a laser beam for interaction with a film in which the laser beam travels along a beam path and defines a short-axis and a long-axis. In one aspect, the system may include a first short-axis element having an edge positioned at a distance, d, along the beam path from the film and a second short-axis element having an edge positioned at a distance, d, along the beam path from the film, with d&#x3c;d. An optic may be positioned along the beam path between the second element and the film for focusing the beam in the short-axis for interaction with the film. In another aspect, a system may be provided having a mechanism operative to selectively adjust the curvature of one or both of the edges of the short-axis element.

Systems and methods for generating laser light shaped as a line beam

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a Flaser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest Fspectral line.

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Line selected F2 two chamber laser system

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

Very narrow band, two chamber, high reprate gas discharge laser system

An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F spectral line.

Very narrow band, two chamber, high rep rate gas discharge laser system

A LIBS cone penetrometer comprises a decoupling mirror to separate an excitation signal and a response signal, an optical fiber arranged with the decoupling mirror for receiving the excitation signal from an energy source and transmitting the response signal from a sample surface, and a cone penetrometer probe connected to the distal end of the optical fiber. The probe further comprises a collimating lens arranged with the optical fiber for collimating the excitation signal and for directing the response signal into the optical fiber. An internally reflecting prism is aligned with the collimating lens to deflect the excitation signal and the response signal between the collimating lens and the sample surface through a window in the side of the probe. A focusing lens is aligned with the prism and the window to reduce the spot size of the excitation signal and to collimate the response signal. The window is arranged with the focusing lens to maintain the distance between the focusing lens and the sample surface and to prevent outside matter from entering the probe.

Laser induced breakdown spectroscopy soil contamination probe

A microscope imaging system comprises a tube including a bore and a sidewall having an aperture; an optically transparent window positioned in the aperture; a light source for generating first light signals which are directed at diffuse angles through the window; an imaging system mounted in the bore for detecting second light signals which enter the bore through the window; and a first lens system for focusing the second light signals onto the imaging system. The system may also include a focusing system for changing the distance between the imaging system and the first lens system, and a fluid delivery system for ejecting a chemical indicator reagent from the probe as it is being deployed through the ground. The reagent is dispersed from the tube in the vicinity of the optical window so that it comes into direct contact with the soil outside the tube near the window. The reagent reacts with a chemical or biological constituent of interest that may be present in the soil to produce a detectable optical response when exposed to a suitable light source.

In situ microscope imaging system for examining subsurface environments

A reliable, modular, production quality narrow-band KrF excimer laser capable of producing 10 mJ laser pulses at 1000 Hz with a bandwidth of about 0.6 pm or less. The present invention is especially suited to long-term round-the-clock operation in the lithographic production of integrated circuits. Improvements over prior art lasers include a single upstream preionizer tube and acoustic baffles. A preferred embodiment includes reduced fluorine concentration, an anode support bar shaped to reduce aerodynamic reaction forces on blower bearings, a modified pulse power system providing faster pulse rise time, an output coupler with substantially increased reflectivity, a line narrowing module with CaF prism beam expanders, a more accurate wavemeter, a laser computer controller programmed with new and improved pulse energy control algorithm.

Reliable. modular, production quality narrow-band KRF excimer laser

Growing community of inventors

San Diego, CA, United States of America

David S Knowles