Asml Netherlands B.v.

Other

David Robert Evans

Jonghoon Baek

Jack Michael Gazza

Mathew Cheeran Abraham

Alexander Igorevich Ershov

Matthew Graham

Chunguang Xia

Andrew David LaForge

Yue Ma

Deniz Van Heijnsbergen

Nina Vladimirovna Dziomkina

John Tom Stewart, Iv

John Tom Stewart

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Cleaning a structure surface in an EUV chamber

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.

System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector

A device and method are disclosed in which a source material delivery system can be reoriented so that the path of the source material is not directly towards an irradiation region in operating conditions in which the path is expected to be unpredictable. A shroud provided to protect the flow of source material from being disrupted is segmented so with one part of the shroud being movable with respect to another part of the shroud so that the movable part can avoid interfering with the path of the source material when it is not directly towards the irradiation region.

Apparatus for and method of source material delivery in a laser produced plasma EUV light source

A vision testing system and a method of operating a data processing system for displaying an eye test pattern on a computer display to a patient during an eye examination are disclosed. The method includes causing the data processing system to display the eye test pattern in a chart region of a computer display controlled by the data processing system and characterized by a luminance in regions not displaying the eye test pattern. An intensity of light leaving the computer display is measured in a sensor region outside the chart region using a display luminance sensor. The luminance of the computer display is adjusted to provide a light level within a predetermined range of light levels based on the measured intensity of light. The data processing system can receive the measured intensity and adjust the display luminescence.

Method and apparatus for vision acuity testing

A device and method are disclosed in which gas is caused to flow parallel to a flow of source material to form a gas shroud. The gas shroud may protect flow of source material from being disrupted by a cross flow of gas. The gas shroud may also limit heating of a physical shroud through which the source material passes and limit accumulation of source material on the physical shroud by deforming a plasma bubble formed during irradiation of the source material so that the plasma bubble does not come too near the physical shroud. A device and method are also disclosed for establishing an additional transverse flow of gas so that the gas shroud does not cause source material contamination of an optic used to collect light generated during irradiation of the source material.

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San Diego, CA, United States of America

David Robert Evans