Epion Corporation

Eaton Corporation

Tel Epion Corporation

Axchlisrtechnologies, Inc.

David Richard Swenson

Kourosh Saadatmand

John J Hautala

Victor M Benveniste

Zhimin Wan

William F DiVergilio

Matthew C Gwinn

Michael E Mack

Martin D Tabat

Edward K McIntyre

Ernst F Scherer

Stephen M Quinn

Kevin W Wenzel

William F Divergilio

A method and system of treating an interior surface on an internal cavity of a workpiece using a charged particle beam. A beam deflector surface of a beam deflector is placed within the internal cavity of the workpiece and is used to redirect the charged particle beam toward the interior surface to treat the interior surface.

Method and system for treating an interior surface of a workpiece using a charged particle beam

Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass {overscore (m)}, average cluster ion energy &#x112;, average cluster ion charge state {overscore (q)}, average cluster ion mass per charge and average energy/charge The measurements are employed in gas cluster ion beam processing systems to monitor and control gas cluster ion beam characteristics that are critical for optimal processing of workpieces by gas cluster ion beam irradiation.

Method of and apparatus for measurement and control of a gas cluster ion beam

Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

Method and apparatus for improved processing with a gas-cluster ion beam

An electrostatic quadrupole lens assembly (,) is provided for an ion implanter (,) having an axis (,) along which an ion beam passes, comprising: (i) four electrodes (,) oriented radially outward from the axis (,), approximately 90&deg; apart from each other, such that a first pair of electrodes (,and,) oppose each other approximately 180&deg; apart, and a second pair of electrodes (,and,) also oppose each other approximately 180&deg; apart; (ii) a housing (,) having a mounting surface (,) for mounting the assembly (,) to the implanter, the housing at least partially enclosing the four electrodes (,); (iii) a first electrical lead (,) for providing electrical power to the first pair of electrodes (,and,); (iv) a second electrical lead (,) for providing electrical power to the second pair of electrodes (,and,); and (v) a plurality of electrically insulating members (,) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (,and,) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (,and,) to the housing. The plurality of electrically insulating members (,) are preferably comprised of quartz (SiO,), or a heat resistant and chemical resistant glass material such as Pyrex&reg;. The members (,) resist accumulation of material such as graphite sputtered off of the electrodes (,) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.

Glass-like insulator for electrically isolating electrodes from ion implanter housing

An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor. The timing circuitry of the energy measurement apparatus is electrically coupled to the first and second sensors and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors. The timing circuitry calculates an average number of ion pulses, N, in the ion beam between the first and second sensors based on the approximation of the ion beam energy and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset)=N.times.T. The timing circuitry than determines the elapsed time, t. The conversion circuitry converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam.

Time of flight energy measurement apparatus for an ion beam implanter

Growing community of inventors

Georgetown, MA, United States of America

David Richard Swenson