Applied Materials, Inc.

David Richard Burgin

Simon Herbert Povall

Hiroyuki Ito

Jonathan Gerald England

David George Armour

John Pontefract

Michael T Wauk

Craig J Lowrie

Nicholas J Bright

Drew Arnold

Michael J King

Ryoji Todaka

Andrew James Timothy Holmes

Timothy G Morgan

David Loome

A vaporizer generating feed gas for the arc chamber of an ion source has a crucible which is heated to a temperature at which material in the crucible sublimes to produce a vapour for use as the feed gas. In addition to the heating element for heating the crucible, there is a cooling element in the form of a cooling duct extending along the length of the crucible for receiving the cooling fluid. Forced cooling of the crucible when the heating element is switched off enables the crucible to be cooled more quickly so that the supply of a feed gas can be terminated sooner. This is important if an ion source is being switched from one feed gas to another. Also, the crucible may be forced cooled simultaneously while energizing the heating element to enable the crucible to be accurately controlled at a lower operating temperature if desired.

Vaporizer for generating feed gas for an arc chamber

An ion implanter has an ion source () and an ion beam extraction assembly () for extracting the ions. The extraction assembly () is a tetrode structure and one of the pairs of extraction electrodes () has left and right ports () located in opposite sides of the ion beam emerging from the ion source (). The left and right electrode ports () are electrically isolated from each other and connected to independent voltage sources (). The ion implanter also has a baffle plate () at the entrance to a mass analyser () downstream of the extraction assembly (). The baffle plate () is also split into two halves (' and&#x2033;). By measuring the beam current incident on the two halves (&#x2033;) of the baffle (), the relative voltages supplied to the left and right electrode parts () may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet ().

Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus

Beam stop apparatus for an ion implanter

Ion beam apparatus

An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.

Improved ion implantation using a variable mass resolving system

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West Sussex, United Kingdom

David Richard Burgin