Varian Semiconductor Equipment Associates, Inc.

Other

David R Timberlake

Joseph C Olson

Frank Sinclair

Shengwu Chang

George Gammel

Stanislav S Todorov

Richard Allen Sprenkle

Norman E Hussey

Kurt T Decker-Lucke

Russell J Low

Mark R Amato

Jonathan Gerald England

James R McLane

James J Cummings

Nathan Roth

Mark D Saunders

Thomas B Callahan

An apparatus for protecting a torso. The apparatus includes a generally planar rigid body having a first end and a second end, pads affixed near the first end and second end of the rigid body that face the torso, and a harness attached to the body that holds the protector in a desired location near the torso. The body forms a bridge between the pads to protect a portion of the torso from an impact.

Protective bridge

A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for.

Method and mechanism for erosion detection of defining apertures

A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Apparatus and techniques for controlling ion implantation uniformity

A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.

An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.

Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control

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Marblehead, MA, United States of America

David R Timberlake