Applied Materials, Inc.

David R Lopes

Gary Eugene Miner

Guangcai Xing

Satheesh Kuppurao

Christian M Gronet

Peter A Knoot

Hyun Sung Joo

Sathees Kuppurao

A method of selectively oxidizing a composite film. According to the present invention a substrate of having a composite film comprising of lower silicon film, a barrier layer, and upper metal film on the barrier layer is placed into a reaction chamber. An inert gas is then fed into reaction chamber to create an inert ambient in the reaction chamber. The temperature of the substrate is then raised or ramped from first temperature to a second temperature in the inert ambient. After the temperature of the substrate is raised to the second temperature the substrate is exposed to an ambient which oxidizes the silicon but which does not oxidize the metal.

Method for selectively oxidizing a silicon/metal composite film stack

A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

Method and apparatus for insitu vapor generation

Method for insitu vapor generation for forming an oxide on a substrate

A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.

Method of oxidizing a substrate in the presence of nitride and

Growing community of inventors

Sunnyvale, CA, United States of America

David R Lopes