Arizona State University

Arizona Board of Regents, a Body Corporate

Intel Corporation

US Government As Represented by the Secretary of the Army

David R Allee

Lawrence T Clark

Sameer M Venugopal

Joseph T Smith

George Rogers Kunnen

Terry L Alford

Eric W Forsythe

Edward John Bawolek

Bart R McDaniel

Jitendran Muthuswamy

Stephen R Phillips

Jennifer Blain Christen

Michael Goryll

Constantine A Balanis

Barry O'Brien

James T Aberle

Narendra V Lakamraju

Nazanin Darbanian

Aritra Dey

Yong-Kyun Lee

Owen C Ma

Kevin Baugh

Edward H Lee

Gregory P Spell

Brett Larsen

Link C Jaw

Anthony M Wilson

Systems and methods for stimulating neural tissue are disclosed. An array of optically emissive pixels is configured to deliver light to the neural tissue of a subject. Individual pixels within the array can be addressed to selectively illuminate a portion of the neural tissue when a neurological event occurs. The system can also include an array of microelectrodes in electrical communication with the array of pixels and a power source. A biocompatible substrate can be used to support the microelectrodes pixels, and the power source. A microelectrode circuit and a pixel circuit can also be supported by the biocompatible substrate.

Integrated high-resolution untethered flexible neural implant

A planar sensor array capable of three-dimensional magnetic field sensing is disclosed. The sensor array may be utilized, for example, in connection with security inspections and detection of concealed electronics and contraband. Each sensor pixel may comprise a planar spiral inductor to measure a magnetic field of interest in a first dimension, a first Hall effect sensor to measure the magnetic field of interest in a second dimension, and a second Hall effect sensor to measure the magnetic field of interest in the third dimension.

Three-dimensional imaging utilizing low frequency magnetic fields

Some embodiments include a system having a detection sensor array, which includes multiple detection sensors with each detection sensor having an enabled state and a disabled state, and having a control module configured to operate the detection sensor array. Under the enabled state, each detection sensor is configured to detect and identify electromagnetic radiation, and under the disabled state, each detection sensor is configured not to detect and identify electromagnetic radiation. Further, the detection sensor array comprises a test state and an operational state. Other embodiments of related systems and methods are also disclosed.

Adaptive detection sensor array and method of providing and using the same

Some embodiments include a system. The system includes a sensor device having a sensor element having a sensor output and an amplification element having at least one amplification stage, an amplifier input, and an amplifier output. The sensor output can be coupled to the amplifier input. Further, each amplification stage of the amplification stage(s) can have at least four thin film transistors, an input node, and an output node. Meanwhile, the sensor element can detect a physical quantity and/or an event and can provide an electric signal to the amplification element in response to detecting the physical quantity and/or the event, and the amplification element can amplify the electric signal received from the sensor element. Other embodiments of related systems and methods are also disclosed.

Thin film transistor detection systems and related methods

Some embodiments include a method of operating a detection sensor array. The detection sensor array has multiple detection sensors. Each detection sensor of the multiple detection sensors has an enabled state and a disabled state, and each detection sensor of the multiple detection sensors is configured to detect and identify electromagnetic radiation when in the enabled state and not to detect and identify electromagnetic radiation when in the disabled state. The detection sensor array also has a test state in which all of the multiple detection sensors operate in the enabled state when the detection sensor array is in the test state. Other embodiments of related systems and methods are also disclosed.

Embodiments of flexible identification systems are described herein. Other embodiments and related methods are also disclosed herein.

Flexible identification systems and related methods

An integrated circuit device that is secure from invasion and related methods are disclosed herein. Other embodiments are also disclosed herein.

Integrated circuits secure from invasion and methods of manufacturing the same

Embodiments of dual stage active pixel devices are described herein. Other examples, implementations, and related methods are also disclosed herein.

Dual stage active pixel devices and related methods

Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Embedded microelectromechanical systems sensor and related devices and methods

Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. Other embodiments, examples thereof, and related methods are also disclosed herein.

Differential threshold voltage non-volatile memory and related methods

Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. In one example, a method for providing an integrated circuit can comprise providing a memory cell coupled to a first bitline and to a second bitline, and at least one of (a) providing a read assist mechanism configured to couple to the memory cell via the first and second bitlines, or (b) providing a memory reset mechanism configured to couple to the memory cell via the first and second bitlines. Providing the memory cell can comprise providing a first transistor comprising a first threshold voltage, providing a second transistor comprising a second threshold voltage, and cross-coupling the first and second transistors of the memory cell together. A difference between the first and second threshold voltages can correspond to a logic state of the memory cell. Other embodiments, examples, and related methods are also disclosed herein.

Embodiments of amplifiers with depletion and enhancement mode thin film transistors are disclosed herein. Other examples, devices, and related methods are also disclosed herein.

Amplifiers with depletion and enhancement mode thin film transistors and related methods

Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.

Sensor devices and related methods

A method and apparatus for detecting electromigration at its outset includes a pair of conductive traces deposited on a substrate in an integrated circuit. A multiplicity of conductors are connected along the length of the traces. Current is passed through the traces and the resistances of the traces from one conductor connection to the next are continually monitored by observing the voltage drop from one conductor to the next. The connection of the conductors to the traces may be less than one micrometer apart. When resistance changes as a result of the onset of electromigration, the exact location can be determined and studied in optical or scanning electron micrographs.

Detection of electromigration in integrated circuits

An improved probing device includes: an elongated, substantially cylindrical flexible fiber having a non-conducting outer surface; one or more circuits disposed on the outer surface of the fiber for simultaneously providing an electrical signal path to and from a plurality of locations, each of the circuits comprising a non-planar integrated circuit extending lengthwise along the outer surface of the fiber; and an insulating layer substantially disposed over the electrical circuits and around the outer surface of the fiber, the insulating layer having a plurality of openings through which selected portions of the electrical circuits are exposed to the locations. Such a probing device when adapted as a neural probe is especially useful for conducting deep brain measurement and stimulation.

Growing community of inventors

Phoenix, AZ, United States of America

David R Allee