Qimonda Ag

David Pritchard

Christoph Kleint

Christoph Ludwig

Roman Knoefler

Clemens Fitz

Joachim Deppe

Dominik Olligs

Ulrike Bewersdorff-Sarlette

Martin Roessiger

Hocine Boubekeur

Stefan Blawid

Torsten Müller

Ludovic Lattard

Manuela Gutsch

A method of forming an integrated circuit includes forming first structures in a first portion of the integrated circuit and forming second structures, which are arranged more densely than the first structures, in a second portion. The first and second structures are defined by lithography processes using photomasks. At least one of the photomasks includes both openings in a first region for supporting the definition of the first structures and openings in a second region for supporting the definition of the second structures.

Integrated circuit including structures arranged at different densities and method of forming the same

Semiconductor device with a first structure comprising a plurality of at least in part parallel linear structures, a second structure comprising a plurality of pad structures, forming at least in part one of the group of linear structure, curved structure, piecewise linear structure and piecewise curved structure which is positioned at an angle to the first structure, and the plurality of pad structures are intersecting at least one of the linear structures in the first structure. An electronic device with at least one semiconductor device, methods for manufacturing a semiconductor device and a mask system are also covered.

Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices

A memory cell array includes a number of memory cells, each of the memory cells including a source and a drain region defined by corresponding bitlines within a semiconductor substrate. Each of the bitlines has a doped semiconductor region as well as a conductive region in direct electrical contact with the doped semiconductor region.

Buried bitline with reduced resistance

Growing community of inventors

Dresden, Germany

David Pritchard