Commissariat a L'energie Atomique Et Aux Energies Alternatives

David Pelletier

Jean-Paul Garandet

Jordi Veirman

Anis Jouini

Malek Benmansour

Mickaël Albaric

Younès Belrhiti

Marc Chatelain

Olivier Bonino

A device for characterising at least one liquid material includes an analysis head and a rotating mechanical mixer. The mixer includes a central part having an internal cavity which forms an analysis chamber, a first end connected to the analysis head, and a plurality of stirring blades which are connected to a second end that is hollow so as to ensure fluid communication between the internal cavity and the liquid bath. The mechanical stirring blades are intended to be totally submerged, the central part comprises one or more openings intended to be partially submerged, and each mechanical stirring blade comprises at least one stirring flange oriented at a non-zero angle of orientation.

Device for characterising a liquid material

A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k'/(2&#x2212;k) (E), wherein k&#x2032; is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.

Method for manufacturing a silicon ingot having uniform phosphorus concentration

The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source

The melting and solidification furnace for crystalline material includes a crucible having a bottom and side walls, and means for heating the crystalline material by magnetic induction. The furnace includes at least one lateral thermal insulation system arranged at the periphery of the crucible around the side walls. At least one lateral element of the lateral thermal insulation system moves with respect to the side walls between an insulating position and a position fostering thermal leakage. The lateral thermal insulation system has an electric conductivity of less than 1 S/m and a thermal conductivity of less than 15 W/m/K.

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La Ravoire, France

David Pelletier