Applied Materials, Inc.

Cisco Technology, Inc.

Pneumrx, Inc.

Broncus Technologies, Inc.

F.f. Seeley Nominees Pty Ltd.

Other

Coherent, Inc.

Asthmatx, Inc.

Boston Scientific Scimed, Inc.

Merck Patent Gmbh

Applied Material, Inc.

Appled Materials, Inc.

Ops Power LLC

Callidus Software, Inc.

David P Thompson

Jeffrey W Anthis

Mark Joseph Saly

Mark L Mathis

Mei Yin Chang

Mark Alan Bakke

Timothy J Kuik

Benjamin Schmiege

Patrick Peichen Wu

Thomas Knisley

Feng Quan Liu

Bhaskar Jyoti Bhuyan

Srinivas Gandikota

Nathan Aronson

Atif Noori

Pravin K Narwankar

Yuriy Melnik

Lakmal Charidu Kalutarage

Sukti Chatterjee

Seshadri Ganguli

Paul F Ma

Xinyu Fu

Li-Qun Xia

Michael D Laufer

Bryan E Loomas

Thomas M Keast

Michael P Boutillette

Wei V Tang

Liqi Wu

Ning Li

Abhijit Basu Mallick

Mihaela A Balseanu

Xinliang Lu

Kelvin Chan

Schubert S Chu

Avgerinos V Gelatos

Susmit Singha Roy

Naomi Yoshida

Lance A Scudder

Steve G Ghanayem

Ziqing Duan

Jonathan Stuart Frankel

Kaushal Gangakhedkar

Atashi Basu

Mehul B Naik

Xianmin Tang

Deenesh Padhi

Pramit Manna

He Ren

Dien-Yeh Wu

Yixiong Yang

Don Akira Tanaka

Yu Lei

Abhishek Dube

Yong Cao

Sang Ho Yu

Yihong Chen

Bruce S Addis

Shih Chung Chen

Tobin Kaufman-Osborn

Lei Zhou

Kevin Vincent Moraes

Michael Sterling Jackson

Nitin K Ingle

Hua Chung

Steven Verhaverbeke

Philip Allan Kraus

Robert Jan Visser

Michael R Smith

Christopher James Danek

Christian Dussarrat

Hyungjun Kim

Hanhong Chen

Mikhail Korolik

Hung Phi Nguyen

Timothy Weidman

Mandyam Sriram

Roman Gouk

Maitreyee Mahajani

Kadthala Ramaya Narendrnath

Gary S Kaplan

Huixiong Dai

Edmund J Roschak

Murali Basavaiah

Patricia M Liu

Kai Wu

Eswaranand Venkatasubramanian

Martin Jeffrey Salinas

Anand Girish Parthasarathy

Lin Zhang

Bencherki Mebarki

Kazuya Daito

Vladimir Zubkov

Jacqueline S Wrench

Feng Chen

Hewlett E Melton, Jr

Yi Xu

Malcolm J Bevan

Anusankar Elangovan

James M Davenport

Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

Methods of depositing SiCON with C, O, and N compositional control

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Methods of selective atomic layer deposition

Using the systems and methods discussed herein, CMAS corrosion is inhibited via CMAS interception in an engine environment and/or is prevented or reduced by the formation of a metal oxide protective coating on a hot engine section component. The CMAS interception can occur while the engine is in operation in flight or in a testing or quality control environment. The metal oxide protective coating can be applied over other coatings, including Gd-zirconates (GZO) or yttria-stabilized zirconia (YSZ). The metal oxide protective coating is applied at original equipment manufacturers (OEM) and can also be applied in-situ using a gas injection system during engine use in-flight or during maintenance or quality testing. The metal oxide protective coating contains a rare earth element, aluminum, zirconium, chromium, or combinations thereof and can have a thickness from 1 nm to 3,000 nm.

Protection of components from corrosion

Using the systems and methods discussed herein, CMAS corrosion is inhibited via CMAS interception in an engine environment and/or is prevented or reduced by the formation of a metal oxide protective coating on a hot engine section component. The CMAS interception can occur while the engine is in operation in flight or in a testing or quality control environment. The metal oxide protective coating can be applied over other coatings, including Gd-zirconates (GZO) or yttria-stabilized zirconia (YSZ). The metal oxide protective coating is applied at original equipment manufacturers (OEM) and can also be applied in-situ using a gas injection system during engine use in-flight or during maintenance or quality testing. The metal oxide protective coating contains a rare earth element, aluminum, zirconium, chromium, or combinations thereof.

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Low temperature deposition of iridium containing films

Methods for depositing protective coatings on aerospace components are provided and include sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface of the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

Methods of protecting metallic components against corrosion using chromium-containing thin films

Methods for forming protective coatings on aerospace components are provided. In one or more embodiments, the method includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a first deposition process (e.g., CVD or ALD), and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second deposition process. The first deposited layer and the second deposited layer have different compositions from each other. The method also includes repeating the first deposition process and the second deposition process to form a nanolaminate film stack having from 2 pairs to about 1,000 pairs of the first deposited layer and the second deposited layer consecutively deposited on each other.

Methods for depositing coatings on aerospace components

Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

Deposition of flowable silicon-containing films

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

Methods for enhancing selectivity in SAM-based selective deposition

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200&#xb0; C. by using an organic platinum group metal precursor.

Oxygen free deposition of platinum group metal films

Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

Selective aluminum oxide film deposition

Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.

ALD process for NiO film with tunable carbon content

Protective coatings on an aerospace component are provided. An aerospace component includes a surface containing nickel, nickel superalloy, aluminum, chromium, iron, titanium, hafnium, alloys thereof, or any combination thereof, and a coating disposed on the surface, where the coating contains a nanolaminate film stack having two or more pairs of a first deposited layer and a second deposited layer. The first deposited layer contains chromium oxide, chromium nitride, aluminum oxide, aluminum nitride, or any combination thereof, the second deposited layer contains aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, yttrium oxide, yttrium nitride, yttrium silicon nitride, hafnium oxide, hafnium nitride, hafnium silicide, hafnium silicate, titanium oxide, titanium nitride, titanium silicide, titanium silicate, or any combination thereof, and the first deposited layer and the second deposited layer have different compositions from each other.

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

Methods for selective deposition of dielectric on silicon oxide

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David P Thompson