Other

University of Florida Research Foundation Inc

Ut-battelle, Inc.

Lockheed Martin Energy Research Corporation

Martin Marietta Energy Systems, Inc.

Lockheed Martin Energy Systems, Inc.

Superpower, Inc.

David P Norton

Amit Goyal

Donald M Kroeger

David K Christen

Eliot D Specht

John D Budai

Mariappan Parans Paranthaman

Dominic F Lee

Venkat Selvamanickam

Qing I He

Jenshan Lin

Gary A Walker

Fan Ren

Stephen John Pearton

Brian C Sales

Frederick Alyious List, Iii

Roeland Feenstra

William Demmer

Seh-Jin Park

Robert Overholt

Clarence Underwood

Edward Demmer

Chan Park

Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit.

System for hydrogen sensing

A device and method is provided wherein a non-extendable strap is attached to the interior of an athletic, or other type of shoe, commencing on the instep side, extending below the user's foot, and ankle, which has been previously fitted with a commercial brace or wrap or taped, which is inserted within the shoe, and the strap is attached within the shoe again on the outstep upper side. The strap element is drawn tight about the user's ankle when the shoe is laced, strapped, or otherwise secured about the user's foot. The strap element extends above the user's ankle, and is pulled taut and affixed to the brace, or wrap, or separately taped, at a position on the outside of the user's lower leg. The device and method of attachment allows the shoe and brace or wrap to act together, as an integrated system, to limit active ankle inversion.

Device and method for combining an athletic shoe and conventional ankle brace to limit active ankle inversion

A biaxially textured article includes a substrate, a first buffer layer disposed on the substrate, the first buffer layer having uniaxial crystal texture characterized by out-of-plane texture with no significant in-plane crystallographic texture. A metal comprising second buffer layer is disposed on the first buffer layer, the second buffer layer having a biaxially textured surface. An electronically active layer, such as a superconductor layer, can be disposed on the second buffer film. Ion-beam assisted processes can be used to biaxially texture the surface of the second buffer film after its deposition.

Method of producing biaxially textured substrates and related articles, devices and systems

An inflation device and method for inflating or deflating inflatable objects, such as game balls is disclosed. The inflation device measures the pressure of a game ball and inflates or deflates the ball to a pressure selected by the user. Also disclosed is an injection apparatus that can be used to automatically retract an injection needle from the game ball or other inflatable object.

Inflation device

A superconductor article includes a substrate and a first buffer film disposed on the substrate. The first buffer film has a uniaxial crystal texture characterized (i) texture in a first crystallographic direction that extends out-of-plane of the first buffer film with no significant texture in a second direction that extends in-plane of the first buffer film, or (ii) texture in a first crystallographic direction that extends in-plane of the first buffer film with no significant texture in a second direction that extends out-of-plane of the first buffer film. A second buffer film is disposed on the first buffer film, the second buffer film having a biaxial crystal texture. A superconductor layer can be disposed on the second buffer film. Ion-beam assisted deposition (IBAD) can be used to deposit the second buffer film.

Method of producing biaxially textured buffer layers and related articles, devices and systems

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO , HfO , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO and/or HfO . The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO , HfO , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO and HfO . The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1&times;10 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Buffer architecture for biaxially textured structures and method of fabricating same

A laminate article consists of a substrate and a biaxially textured protective layer over the substrate. The substrate can be biaxially textured and also have reduced magnetism over the magnetism of Ni. The substrate can be selected from the group consisting of nickel, copper, iron, aluminum, silver and alloys containing any of the foregoing. The protective layer can be selected from the group consisting of gold, silver, platinum, palladium, and nickel and alloys containing any of the foregoing. The protective layer is also non-oxidizable under conditions employed to deposit a desired, subsequent oxide buffer layer. Layers of YBCO, CeO , YSZ, LaAlO , SrTiO , Y O , RE O , SrRuO , LaNiO and La ZrO can be deposited over the protective layer. A method of forming the laminate article is also disclosed.

Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO,overlying a substrate of (001) Ge.

Method of physical vapor deposition of metal oxides on semiconductors

A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

High Tc YBCO superconductor deposited on biaxially textured Ni substrate

A biaxially textured alloy article includes a rolled and annealed biaxially textured base metal substrate characterized by an x-ray diffraction phi scan peak of no more than 20.degree. FWHM; and a biaxially textured layer of an alloy or another material on a surface thereof. The article further includes at least one of an electromagnetic device or an electro-optical device epitaxially joined to the alloy.

Structures having enhanced biaxial texture

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

Growing community of inventors

Knoxville, TN, United States of America

David P Norton