Globalfoundries Inc.

David N Power

Xiang Hu

Paul Willard Ackmann

Yuping Ren

Chin Teong Lim

Guo Xiang Ning

Jie Zhang

Liang Cao

Eric S Parent

Lalit Shokeen

Methods according to the disclosure include: predicting process-sensitive geometries (PSGs) in a proposed IC layout based on violations of a set of processing constraints for the proposed IC layout, the set of processing constraints being calculated with a predictive model based on a training data repository having a plurality of optical rule check (ORC) simulations for different IC layouts; identifying actual PSGs in a circuit manufactured using the proposed IC layout; determining whether the predicted PSGs correspond to the actual PSGs in the manufactured circuit as being correct; in response to the predicting being incorrect: adjusting the predictive model based on the actual PSGs, wherein the adjusting includes submitting additional ORC data to the training data repository; and flagging the proposed IC layout as incorrectly predicted; and in response to the predicting being correct, flagging the proposed IC layout as correctly predicted.

Prediction of process-sensitive geometries with machine learning

A method and apparatus for generating a final dielectric etch compensation table and a final hard mask etch compensation table for either OPC or MPC process flows are provided. Embodiments include performing an overlap pattern classification on a wafer; calibrating a dielectric etch bias or a hard mask etch bias based on the pattern classification; comparing either a CD overlap of a via layer with a metal layer and a CD overlap of the via layer with a lower connecting metal layer or a CD overlap of the metal layer with an upper connecting via layer and a CD overlap of the metal layer with the via layer against a criteria; outputting final dielectric etch compensation and hard mask etch compensation tables to either OPC or MPC process flows; and repeating the steps of calibrating, comparing, and outputting for either the via layer or metal layer remaining.

Hard mask etch and dielectric etch aware overlap for via and metal layers

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Saratoga Springs, NY, United States of America

David N Power