Eastman-kodak Company

Truesense Imaging, Inc.

Semiconductor Components Industries, LLC

David N Nichols

John Thomas Compton

John N Border

Eric Gordon Stevens

David L Losee

Andrew Charles Gallagher

Christopher Parks

Shen Wang

Stephen L Kosman

Eric J Meisenzahl

Robert Leroy Nielsen

Gilbert Alan Hawkins

Constantine N Anagnostopoulos

Herbert J Erhardt

Edward T Nelson

Charles V Stancampiano

Robert P Fabinski

Greg L Archer

John P Shepherd

William F DesJardin

In various embodiments, a time-delay-and-integrate (TDI) image sensor includes (i) a plurality of integrating CCDs (ICCDs), arranged in parallel, that accumulate photocharge in response to exposure to light, (ii) electrically coupled to the plurality of ICCDs, a readout CCD (RCCD) for receiving photocharge from the plurality of ICCDs, and (iii) electrically coupled to the RCCD, readout circuitry for converting charge received from the RCCD into voltage.

Time-delay-and-integrate image sensors having variable integration times

A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.

CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register

Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Methods for capturing and reading out images from an image sensor

A CCD image sensor comprises photosensitive elements arranged in rows and columns, vertical CCDs each having vertical shift elements associated with respective ones of the photosensitive elements of a corresponding one of the columns, and a horizontal CCD coupled to each of the vertical CCDs. The horizontal CCD comprises horizontal shift elements of two different types interspersed with one another. The horizontal shift elements of the first type are configured to receive shifted charge packets directly from respective ones of the vertical CCDs. The horizontal shift elements of the second type are configured not to receive shifted charge packets directly from any of the vertical CCDs. This configuration facilitates binning of same-color pixels for both sparse CFA patterns and Bayer CFA patterns.

Charge-coupled device image sensor with efficient binning of same-color pixels

An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.

Photodetector and n-layer structure for improved collection efficiency

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Fairport, NY, United States of America

David N Nichols