Praxair Technology, Inc.

Intel Corporation

David Michael Thompson

John D Peck

David Walter Peters

Adrien Lavoie

Cynthia A Hoover

Harsono S Simka

Juan E Dominguez

John J Plombon

Scott Houston Meiere

Valery M Dubin

Kevin O'Brien

Joseph Han

Ronald F Spohn

Steven W Johnston

Michael M Litwin

Juan E Dominquez

This invention relates to organometallic compounds represented by the formula (L)M(L)wherein M is a Group 5 metal or a Group 6 metal, Lis a substituted or unsubstituted anionic 6 electron donor ligand, Lis the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of Land Lis equal to 0; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Organometallic compounds, processes for the preparation thereof and methods of use thereof

This invention relates to processes for the production of organometallic compounds represented by the formula M(L)wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Processes for the production of organometallic compounds

This invention relates to organometallic precursor compounds represented by the formula (Cp(R'))M(H), a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

This invention relates to organometallic compounds represented by the formula (L)M(L)wherein M is a metal or metalloid, Land Lare different and are each a hydrocarbon group or a heteroatom-containing group;is a value of at least 1;is a value of at least 1;+is equal to the oxidation state of M; and wherein (i) Lhas a steric bulk sufficiently large such that, due to steric hinderance,cannot be a value equal to the oxidation state of M, (ii) Lhas a steric bulk sufficiently small such that, due to lack of steric hinderance,can be a value equal to the oxidation state of M only in the event thatis not a value of at least 1, and (iii) Land Lhave a steric bulk sufficient to maintain a heteroleptic structure in which+is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Heteroleptic organometallic compounds

Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp', where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D, where Dis X; CHX; CHX(C&#x2550;O)CHX; CHXOCHX; CHX(C&#x2550;O)OCHX; or CHXO(C&#x2550;O)CHX; and Cp&#x2032; is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D&#x2032;, where D1&#x2032; is X; CHX; CHX(C&#x2550;O)CHX; CHXOCHX; CHX(C&#x2550;O)OCHX; or CHXO(C&#x2550;O)CHX. Dand D&#x2032; are different from one another. X is a halogen atom or NO; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1&#x2212;c1; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2. The process can be used in manufacturing or processing electronic devices.

Deposition processes using group 8 (VIII) metallocene precursors

Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.

Organometallic precursors for seed/barrier processes and methods thereof

This invention relates to high nucleation density organometallic ruthenium compounds. This invention also relates to a process for producing a high nucleation density organometallic ruthenium compound comprising reacting a bis(substituted-pentadienyl)ruthenium compound with a substituted cyclopentadiene compound under reaction conditions sufficient to produce said high nucleation density organometallic ruthenium compound. This invention further relates to a method for producing a film, coating or powder by decomposing a high nucleation density organometallic ruthenium compound precursor, thereby producing the film, coating or powder.

High nucleation density organometallic compounds

A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

Amine-free deposition of metal-nitride films

A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.

Direct tailoring of the composition and density of ALD films

Asymmetric, disubstituted metallocene compounds have the general formula CpMCp' where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D; Cp&#x2032; is a second substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D&#x2032;. Dis different from D&#x2032;. Dis X; CHX; CHX(C&#x2550;O)CHX; or CHXOCHX, where X is a halogen atom or nitro group; a1 is an integer between 2 and 8; b1 is an integer between 0 and 2(a1)+1&#x2212;c1; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2; and D1&#x2032; is X; CHX; CHX(C&#x2550;O)CHX; or CHXOCHX, where X is a halogen atom or nitro group; a1 is an integer between 1 and 8; b1 is an integer between 0 and 2(a2)+1&#x2212;cl; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2. The compounds can be employed as precursors in film deposition processes.

Asymmetric group 8 (VIII) metallocene compounds

A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp' anion, such as found, together with a counterion, in a cyclopentadienide or cyclopentadienide-like salt. In one embodiment, the method includes reacting a metal salt, a (Cp) compound, such as a substituted or unsubstituted cyclopentadiene or indene, and a ligand (L) to form an intermediate compound and reacting the intermediate compound with a Cp&#x2032; compound, eg., a cyclopentadienide or cyclopentadienide-like salt, where the metal salt can be is a ruthenium, an osmium or an iron halide or nitrate and L is an electron pair donor. Unsubstituted, mono-substituted as well as symmetrically or asymmetrically di- or multi-substituted metallocenes or metallocene-like compounds can be produced. In another embodiment, unsubstituted or symmetrically substituted metallocenes are formed by reacting MX(PPh)with a Cp&#x2032; compound, where m=3 or 4. The method can be used to form precursors for chemical vapor deposition of thin films.

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East Amherst, NY, United States of America

David Michael Thompson