Triquint Semiconductor Corporation

David Michael Fanning

Hua-Quen Tserng

Warren Robert Gaiewski

Gary Alan Evans

Hua Q Tserng

Edward A Beam, Iii

Paul Saunier

William H Davenport

Andy Turudic

Ming-Yih Kao

Walter Anthony Wohlmuth

Embodiments include but are not limited to apparatuses and systems including a unit cell having a source electrode, a gate electrode to receive an input radio frequency (RF) signal, and a drain electrode to output an amplified RF signal. A field plate may be coupled with the source electrode, and a feedback resistor may be coupled between the field plate and the source electrode.

Field-plated transistor including feedback resistor

Embodiments include but are not limited to apparatuses and systems including a circuit comprising a unit cell including an input and an output, and a harmonic trap, intrinsic to the unit cell, implemented on one of the input and the output. Other embodiments may be described and claimed.

Transistor including intrinsic harmonic trap

Embodiments of circuits and systems for a radio frequency (RF) power amplifier employing output harmonic resonators are disclosed. The RF power amplifiers may include amplification circuitry having unit cells and output harmonic resonators co-disposed on a chip. In some embodiments, each unit cell may be coupled with a respective output harmonic resonator. Other embodiments may be described and claimed.

Power amplifier with output harmonic resonators

A high-frequency stabilization network for microwave devices and monolithic integrated circuits. The stabilization network may comprise one or more monolithic RL parallel networks, configured to reduce in-band high-frequency oscillation, such as Gunn effect oscillation and IMPATT oscillation.

High frequency stabilization network for microwave devices and monolithic integrated circuits

A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.

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Garland, TX, United States of America

David Michael Fanning