Sk Hynix Nand Product Solutions Corp.

Intel Ndtm US LLC

David Meyaard

Krishna Kumar Parat

Chang Wan Ha

Deepak Thimmegowda

Liu Liu

Vijay Saradhi Mangu

Randy Koval

Ahsanur Rahman

Richard M Gularte

Hoon Koh

An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.

3D NAND with inter-wordline airgap

An embodiment of a memory device may include a full block memory array of a lower tile of 3D NAND string memory cells, a full block memory array of an upper tile of 3D NAND string memory cells, a first portion of a string driver circuit coupled to the full block memory array of the lower tile, a second portion of the string driver circuit coupled to the full block memory array of the upper tile, a first split block memory array of the lower tile coupled to the first portion of the string driver circuit, and a second split block memory array of the upper tile coupled to the second portion of the string driver circuit. Other embodiments are disclosed and claimed.

Split block array for 3D NAND memory

Growing community of inventors

Boise, ID, United States of America

David Meyaard