Asml Netherlands B.v.

David Merritt Phillips

Erik Henricus Egidius Catharina Eummelen

Yuri Johannes Gabriël Van De Vijver

Bernd Geh

Norbertus Josephus Martinus Van Den Nieuwelaar

Jorge Alberto Vieyra Salas

Bert Dirk Scholten

Victor Manuel Blanco Carballo

Pieter Lein Joseph Gunter

Ronald Frank Kox

Frederik Antonius Van Der Zanden

Marijn Wouters

Eric Anthony Janda

Casper Roderik De Groot

Rolf Hendrikus Jacobus Custers

Roger Irwin

An immersion lithography apparatus has a controller configured to control a substrate table to move along an exposure route including in order: an entry motion in which the substrate moves from an off-substrate position at which the immersion space does not overlap the substrate to an on-substrate position at which the immersion space at least partially overlaps the substrate, a transfer motion in which the substrate table changes speed and/or direction and moves for at least a transfer time after the substrate moves to the on-substrate position, and an expose motion in which the substrate is scanned and the patterned beam is projected onto the substrate, wherein throughout the transfer motion at least a part of the immersion space overlaps the substrate and wherein the patterned beam is not projected onto the substrate during the entry motion and the transfer motion.

Lithography apparatus, a method of manufacturing a device and a control program

Lithography apparatus and method of manufacturing a device

A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.

Lithographic processing optimization based on hypersampled correlations

A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate-processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.

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Hillsboro, OR, United States of America

David Merritt Phillips