International Business Machines Corporation

David Mecerreyes

Robert Dennis Miller

Craig Jon Hawker

James L Hedrick

Elbert Emin Huang

Willi Volksen

Teddie Peregrino Magbitang

Victor Yee-Way Lee

James Lupton Hedrick

Olof Mikael Trolls&aring;s

Andreas Heise

Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.

Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens

The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Insulative matrix material

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Santa Cruz, CA, United States of America

David Mecerreyes