Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies International Sales Pte. Limited

David Martin

John Choy

Joel Philliber

Osvaldo Buccafusca

Donald Lee

Dariusz Burak

Phil Nikkel

Lovell Harold Camnitz

Sean T Hansen

Kun Wang

Alexia Kekoa

Bernhard Ulrich Koelle

Keri Liane Williams

Lori Ann Callaghan

An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer, where an overlap between the top electrode, the piezoelectric layer and the bottom electrode over the air cavity defines a main membrane region. The acoustic resonator device further includes at least one metal frame disposed on a bottom surface of the bottom electrode having a thickness that ranges from about 10% to about 75% of a thickness of the bottom electrode in a central region of the bottom electrode. The thickness of the metal frame improves heat dissipation out of the acoustic resonator device while also improving structural stability of the acoustic resonator device without detrimentally affecting its performance.

Acoustic resonator device with at least one air-ring and frame

In a bulk acoustic resonator device, at least one additional metal feature is formed on a top surface of the bottom electrode at a location at which the bottom electrode electrical contact will subsequently be formed, thereby thickening the metal at the location below where the piezoelectric material layer will be etched to form the opening for the bottom electrode electrical contact. Consequently, even though some of the metal of the additional metal feature and/or of the bottom electrode will be removed during the process of etching the opening in the piezoelectric material layer, the bottom electrode will always retain sufficient thickness after the piezoelectric material layer is etched.

Bulk acoustic resonator devices and processes for fabricating bulk acoustic resonator devices

An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.

Micromachined horn

A micromachined structure, comprises a substrate and a cavity in the substrate. The micromachined structure comprises a membrane layer disposed over the substrate and spanning the cavity.

Temperature control of micromachined transducers

A transducer apparatus comprises a package substrate and a transducer disposed over a die substrate. The die substrate is disposed over the package substrate. The transducer apparatus also comprises a voltage source connected between the die substrate and the package substrate, and configured to selectively apply an electrostatic attractive force between the die substrate and the package substrate.

Electrostatic bonding of a die substrate to a package substrate

An integrated transducer device includes an optical transducer and an acoustic transducer integrally joined with the optical transducer. The acoustic transducer includes a membrane responsive to acoustic signals, the membrane being aligned with the optical transducer such that optical signals emitted or received by the optical transducer pass through the membrane. A propagation direction of the acoustic signals emitted or received by the acoustic transducer is collinear with a propagation direction of the optical signals emitted or received by the optical transducer.

Integrated optical and acoustic transducer device

A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.

Transducer devices having different frequencies based on layer thicknesses and method of fabricating the same

In accordance with an illustrative embodiment, a method of fabricating a transducer is described. The method comprises providing a transducer over a first surface of a substrate, wherein the substrate comprises a thickness. The method further comprises patterning a mask over a second surface. The mask comprises an opening for forming a scribe etch. The method comprises etching through the opening in the mask and into but not through the thickness of the substrate to provide the scribe etch.

Micromachined transducers and method of fabrication

A device includes a first wafer, a second wafer, a gasket bonding the first wafer to the second wafer to define a cavity between the first wafer and the second wafer, and an acoustic transducer disposed on the first wafer and disposed within the cavity between the first wafer and the second wafer. One or more apertures are provided for communicating an acoustic signal between the acoustic transducer and an exterior of the device. An aperture may be formed in the cavity itself, or the cavity may be hermetically sealed. An aperture may be formed completely through the first wafer and located directly beneath at least a portion of the acoustic transducer.

Microcap acoustic transducer device

A micro-electromechanical systems (MEMS) ultrasonic transducer device includes a substrate defining an opening and an active transducer having multiple of active layers stacked over the opening of the substrate. The active transducer is completely encapsulated by multiple passivation layers.

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Fort Collins, CO, United States of America

David Martin