Svg Lithography Systems, Inc.

Nikon Corporation

David M Williamson

Yasuhiro Omura

Hironori Ikezawa

Daniel Nicholas Galburt

An immersion optical system includes a plurality of lenses disposed along a light beam path of the immersion optical system. The plurality of lenses include a liquid immerged lens which is contactable with a liquid layer. An optically conjugate point of an object surface is formed in the light beam path of the immersion optical system. The object surface is contactable with a liquid.

Projection optical system and method for photolithography and exposure apparatus and method using same

Optical Projection System and Method for Photolithography. A lithographic immersion projection system and method for projecting an image at high resolution over a wide field of view. The projection system and method include a final lens which decreases the marginal ray angle of the optical path before light passes into the immersion liquid to impinge on the image plane.

A catadioptric projection optical system for use in photolithography used in manufacturing semiconductors having a quarter waveplate following a reticle and multiple aspheric surfaces and calcium fluoride lens elements. A quarter waveplate following the reticle eliminates asymmetry in reticle diffraction caused by polarized illumination. The use of additional aspheric surfaces reduces the number of lens elements and aids in reducing aberrations. Calcium fluoride elements are used in the lens group adjacent the wafer to help minimize compaction. In one embodiment, only calcium fluoride material is used. The present invention provides a projection optics system having a numerical aperture of 0.75 for use with wavelengths in the 248, 193, and 157 nanometer range. The object and image locations are separated by a predetermined distance, making possible retrofitting of older optical systems. The present invention is particularly suited for use in semiconductor manufacturing and has improved imaging with less aberrations, particularly at shorter wavelengths.

High numerical aperture catadioptric lens

On-axix mask and wafer alignment system

An all reflective ring field projection optic system for use in scanning photolithography used in the manufacture of semiconductor wafers. The projection optics are designed for wavelengths in the extreme ultraviolet ranging from 11 to 13 nm to provide an arcuate image field for a reduction step and scan photolithography system. A sequence or configuration of mirrors from the long conjugate end to the short conjugate end consists of a convex, concave, convex, and concave mirror with an aperture stop being formed at or near the second convex mirror. This sequence of mirror powers provides a relatively large image field size while maintaining a relatively compact reticle wafer distance of less than 900 mm. The projection optics form an instantaneous annual field of up to 50 mm.times.2 mm at the wafer, permitting scanning to cover a field on a wafer of at least 50 mm.times.50 mm, greatly increasing throughput. The optical projection system can print features as small as 0.05 microns.

Four mirror EUV projection optics

An optical projection reduction system used in photolithography for the manufacture of semiconductor devices having a first mirror pair, a second field mirror pair, and a third mirror pair. Electromagnetic radiation from a reticle or mask is reflected by a first mirror pair to a second field mirror pair forming an intermediate image. A third mirror pair re-images the intermediate image to an image plane at a wafer. All six mirrors are spherical or aspheric and rotationally symmetrical about an optical axis. An annular ring field is obtained, a portion of which may be used in a step and scan photolithography system. In another embodiment, weak refracting elements are introduced to further reduce residual aberrations allowing a higher numerical aperture. In the catoptric embodiment of the present invention, a numerical aperture of 0.25 is obtained resulting in a working resolution of 0.03 microns with electromagnetic radiation having a wavelength of 13 nanometers. The optical projection reduction systems are intended for use at extreme ultraviolet to the soft X-ray wavelength range. The present invention, provides a relatively high numerical aperture and uses substantially all reflective elements, greatly facilitating the manufacture of semiconductor devices having feature sizes below 0.25 microns.

High numerical aperture ring field optical reduction system

A catadioptric optical reduction system for use in the photolithographic manufacture of semiconductors having a concave mirror operating near unit magnification, or close to a concentric condition. A lens group before the mirror provides only enough power to image the entrance pupil at infinity to the aperture stop at or near the concave mirror. A lens group after the mirror provides a larger proportion of reduction from object to image size, as well as projecting the aperture stop to an infinite exit pupil. An aspheric concave mirror is used to further reduce high order aberrations. The catadioptric optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.35 microns over a 26.times.5 millimeter field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine glasses of different refracting power to widen the spectral bandwidth which can be achieved.

Growing community of inventors

West Malvern, United Kingdom

David M Williamson