Microelectronics and Computer Technology Corporation

David M Sigmond

David H Carey

Ian Y Yee

Charles W Lin

Randy L German

Douglass A Pietila

Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.

Trenching techniques for forming channels, vias and components in

A method for detecting the completion of electrolessly depositing metal into a via. The method includes providing a non-autocatalytic detection mask with an opening over a via containing an autocatalytic material, electrolessly depositing a conductive metal into the via which fails to plate to the mask, and continuing the deposition until metal in the via contacts the mask, at which time the electrochemical potential of the mask changes and the metal plates to and covers the entire mask. The completion of the electroless via fill can be detected by changes in both the appearance and electrochemical potential of the mask.

Detecting completion of electroless via fill

A method of making a metal-on-elastomer pressure contact connector. The method includes embedding a plurality of parallel co-planar copper-beryllia wires comprising a plurality of coils in a silicone rubber elastomer with top and bottom surfaces, and removing metal from the tops and bottoms of the coils to form a pair of isolated wire filaments from each coil which extend from the top surface to the bottom surface of the elastomer. The filaments form arrays of electrical contacts above and below the elastomer exceeding 10,000 contacts per square inch.

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Austin, TX, United States of America

David M Sigmond