Semiconductor Components Industries, LLC

Motorola Corporation

Other

David M Heminger

Stephen P Robb

Francine Y Robb

Jeffrey Pearse

Joseph H Slaughter, Iii

Robert Bruce Davies

Alan Richard Ball

Sudhama C Shastri

David F Mietus

Yenting Wen

Thomas Keena

Paul G Alonas

Hassan Pirastehfar

Mark A Thomas

Ryan J Hurley

Alejandro Lara-Ascorra

Lloyd H Hayes

George C Onodera

Vincent L Mirtich

Brian D Meyer

Waisiu Law

William M Coppock

Margaret E Fuchs

William H Grant

In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.

Method of forming a semiconductor device and structure therefor

In one embodiment, and electro-static discharge detector is formed with a plurality of channels and is configured to detect a positive electro-static discharge and a negative electro-static discharge.

Method of forming an ESD detector and structure therefor

In one embodiment, a filter structure that integrates one plate of a capacitor with an electrode of a transient voltage device. The filter structure includes a well region of one conductivity type formed in semiconductor substrate of an opposite conductivity type. The well region forms one plate of the capacitor and an electrode of the transient voltage suppression device. A dielectric layer is formed over a portion of the well region and a conductive layer is formed overlying the dielectric layer to provide a second plate of the capacitor. The dopant concentration of the well region provides a constant capacitance/voltage characteristic for the filter structure when a selected voltage range is applied to plates of the capacitor.

Filter having integrated floating capacitor and transient voltage suppression structure and method of manufacture

In one embodiment, a current regulator is configured to form a first signal representative of a current flow through a power switch and to use the first signal to determine an off-time of the power switch.

Current regulator and method therefor

A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device () provides an enhanced gain operation, while device () provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.

Low voltage transient voltage suppressor and method of making

Low voltage transient voltage suppressor

A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device ( ) provides an enhanced gain operation, while device ( ) provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.

Depletion mode pass transistor ( ) accepts input voltage V and provides regulated output voltage V . The regulated output voltage is referenced to the threshold voltage of MOSFET ( ) and is directly proportional to the ratio of resistors ( and ). MOSFET ( ) provides enabling and disabling of voltage regulator ( ). Multiple voltage regulators (FIG. ) having multiple output potentials are realized on the same semiconductor die producing the same threshold potential for MOSFET's ( ), whereby the output potentials are selectable using the ratio of resistors and . Constant current source ( ) reduces output voltage variation due to input voltage variation.

Low voltage metal oxide semiconductor threshold referenced voltage regulator and method of using

A current limiter (15) is formed between a silicon substrate (10) and a source region (17) by a channel implant region (20). The channel implant region (20) is not modulated by a gate structure so the maximum voltage that can flow between the silicon substrate (10) and the source region (17) is determined by the doping profile of the ever-present channel implant region (20). A pinch-off structure (12) is used to form a depletion region which can support a large voltage potential between the silicon substrate (10) and the source region (17). In an alternate embodiment, a bipolar device is formed such that a limited current flow can be directed into a base region (32) which is used to modulate a current flow between silicon substrate (30) and an emitter region (38). Using the current limiters (15,35) it is possible to form an AC current limiter (50) that will limit the current flow regardless of the polarity of the voltage placed across two terminals (51,52).

High voltage current limiter and method for making

An inductive driver circuit (10) has a driver transistor (11) that is used for driving loads. An input protection device (13) and a voltage suppression device (12) assist in protecting the transistor (11). The circuit (10), including the driver transistor (11) and the input protection device (13), are formed in a common collector region.

Inductive driver circuit and method therefor

A triac (100) utilizes an FET (107) to inhibit firing of a transistor (112) that forms a portion of the SCR of the triac (100). A DMOS transistor (106) is used to supply a substantially constant bias current to the transistor (107) in order to facilitate rapid turn-on of the transistor (107) around the zero-crossing of the voltage applied to the triac (100).

Zero-crossing triac and method

A current limiter (15) is formed between a silicon substrate (10) and a source region (17) by a channel implant region (20). The channel implant region (20) is not modulated by a gate structure so the maximum voltage that can flow between the silicon substrate (10) and the source region (17) is determined by the doping profile of the ever-present channel implant region (20). A pinch-off structure (12) is used to form a depletion region which can support a large voltage potential between the silicon substrate (10) and the source region (17). In an alternate embodiment, a bipolar device is formed such that a limited current flow can be directed into a base region (32) which is used to modulate a current flow between silicon substrate (30) and an emitter region (38). Using the current limiters (15, 35) it is possible to form an AC current limiter (50) that will limit the current flow regardless of the polarity of the voltage placed across two terminals (51, 52).

An optically isolated N-channel MOSFET driver turns on a MOSFET device in response to an optical input signal to drive a load. The turn-on time of the MOSFET is enhanced by a current boost circuit. As the MOSFET transcends to an on state and delivers current to the load, the voltage across the device diminishes and causes the current boost circuit to become inactive thus reducing to zero the current drain consumed by the current boost circuit. A photovoltaic array maintains the MOSFET operation. An optically isolated SCR is respondent to the absence of a light signal to turn off the MOSFET. Furthermore, the optical decoupling of the SCR, between the gate and source of the MOSFET device, is arranged to provide enhanced noise immunity. A voltage clamping circuit coupled between the gate and source of the MOSFET device provides additional protection to the device from large over voltages.

Optically isolated N-channel MOSFET driver

A current source with adjustable temperature compensation in which the level of current supplied to a load is adjusted to compensate for the load's inherent change in performance with changes in temperature. The current source allows selection of the appropriate temperature compensating characteristic and operating current solely by altering internal component values.

Current source with adjustable temperature variation

An improved photo detector is provided by forming a tub of monocrystalline semiconductor material surrounded by a layer of monocrystalline material of opposite conductivity type. The improved structure is manufactured by means of a modified DIC process. The device may by made deep enough to absorb a large portion of the incident radiation near the PN junction without sacrificing a large number of photo-generated carriers to recombination.

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Mesa, AZ, United States of America

David M Heminger