Little Optics Inc

Infinera Corporation

Martin Marietta Corporation

David M Gill

Oliver S King

Frederick Gorr Johnson

John V Hryniewicz

Brent Everett Little

Roy R Davidson

Sai T Chu

Lance G Joneckis

Philippe Patrick Absil

Wei Chen

Wenlu Chen

Parvez N Uppal

Timothy J Davidson

Warren P Berk

An intermediate structure used to form an integrated optics device comprising a substrate, a cladding on the substrate, at least one real waveguide on the cladding, and at least one dummy waveguide optically coupled with the real waveguide. The real waveguide forms a part of a predetermined planar lightwave circuit. The dummy waveguide does not form a part of the predetermined planar lightwave circuit.

Highly symmetric optical structures

A plurality of mask images defines an optical circuit image in photoresist. Each of the mask images comprises parts of the optical circuit and the totality of all mask images together defines an optical circuit. The optical circuit is thus made up of plural optical elements some of which may be positioned in drop-in locations within the boundary of another optical circuit element. A photolithography system globally aligns and exposes the mask images in photoresist. The resultant composite image is substantially indistinguishable from a single image of the entire optical circuit. Different images for each of the mask image parts can be substituted with other images or image parts and thereby exponentially increasing the number of circuit permutations from a predetermined number of available mask images. A unique optical circuit, for example, can be generated from a pre-existing library of reticle images. The images are printed in predetermined locations on a substrate to define the desired optical circuit. Thus, predefined second optical circuit elements can be dropped in (imaged or exposed) locations within a first optical circuit.

Integrated optical circuits having drop-in locations for optical circuit elements

A method is disclosed for forming an optical circuit on a substrate. The method includes the deployment of a plurality of mask images to define an optical circuit image in photoresist. Each of the mask images define parts of the optical circuit and the totality of all mask images substantially define an optical circuit. A photolithography system globally aligns and exposes the mask images in photoresist. The resultant composite image is substantially indistinguishable from a single image of the entire optical circuit. Different images for each of the mask image parts can be substituted with other images or image parts and thereby exponentially increasing the number of circuit permutations from a predetermined number of available mask images. The method is also applicable to generating a unique optical circuit from a pre-existing library of reticle images. The images are printed in predetermined locations on a substrate to define the desired optical circuit.

Method of forming an integrated optical circuit

Silicon-oxycarbide optical waveguides and thermooptic devices include a substrate and a first cladding layer having a first refractive index positioned over a substrate. A first core layer comprising silicon, oxygen, and carbon and having a core refractive index is formed on the first cladding layer by chemical vapor deposition using at least two precursors: one inorganic silicon precursor gas and at least one second precursor gas comprising carbon and oxygen. Alternatively, at least three precursors can be used: one inorganic silicon precursor gas, a second precursor comprising carbon, and a third precursor comprising oxygen. The core layer is lithographically patterned to define waveguide elements. A second cladding layer having a second cladding refractive index is formed to surround the optical core waveguiding element of the first core layer.

Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices

The integrated optical circuit of the present invention includes a substrate with a first cladding layer. A first core layer having one or more waveguiding elements is formed on the first cladding layer. A second cladding layer surrounds the waveguiding elements of the first core layer; the refractive index of the first and second cladding layers are selected to be less than the refractive index of the waveguiding element(s). Through simultaneous cladding material deposition and cladding material removal, the second cladding layer as deposited is substantially self-planarized, enabling further layers to be positioned on the second cladding layer without necessitating intermediate planarization. Further, the present invention permits planar waveguide cores having submicron core spacings to be covered by a subsequently-deposited cladding layer without cladding gaps, seams or other deleterious cladding defects.

Integrated optical circuit with dense planarized cladding layer

Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiO N :D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides

Semiconductor devices made in highindium-content semiconductor material have advantageous properties, but similar substrate materials are hard to handle. A buffer layer makes a lattice-constant transition between a GaAs substrate and a high-indium epitaxially deposited semiconductor such as those lattice-matched to InP. The buffer layer is an epitaxial layer including atoms of two Group III elements, and atoms of two Group V elements, with the ratio of the atoms of at least one group varied along the depth of the buffer layer, in a manner which makes a transition of the lattice constant between that of the substrate and the high-Indium semiconductor material. The Group III elements are gallium and aluminum, and the Group V elements are arsenic and antimony.

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Pasadena, MD, United States of America

David M Gill