Sandia Corporation

David M Follstaedt

Michael Patrick Moran

Jung Han

Carol I Ashby

James Arthur Knapp

Christine C Mitchell

Dawn M Bishop

Samuel M Myers, Jr

John C Barbour

Samuel Maxwell Myers

A method for thinning (such as in grinding and polishing) a material surface using an instrument means for moving an article with a discontinuous surface with an abrasive material dispersed between the material surface and the discontinuous surface where the discontinuous surface of the moving article provides an efficient means for maintaining contact of the abrasive with the material surface. When used to dimple specimens for microscopy analysis, a wheel with a surface that has been modified to produce a uniform or random discontinuous surface significantly improves the speed of the dimpling process without loss of quality of finish.

Method for thinning specimen

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10 /cm .

Cantilever epitaxial process

A process for fabricating dispersion-strengthened ceramic-metal composites is claimed. The process comprises in-situ interaction and chemical reaction of a metal in gaseous form with a ceramic producer in plasma form. Such composites can be fabricated with macroscopic dimensions. Special emphasis is placed on fabrication of dispersion-strengthened aluminum oxide-aluminum composites, which can exhibit flow stresses more characteristic of high strength steel.

Process for the synthesis of nanophase dispersion-strengthened aluminum

Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer.

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Albuquerque, NM, United States of America

David M Follstaedt