Semiconductor Components Industries, LLC

David Lysacek

Lukás Válek

Jan Sik

Michal Lorenc

Petr Kostelnik

Petr Panek

Viola Krizakova

Jana Vojtechovska

Lubomir Dornak

A method of forming a semiconductor device includes providing a semiconductor substrate and forming amorphous semiconductor layers adjacent a major surface of the substrate. The method includes interposing dielectric layers between the amorphous semiconductor layers. The method includes forming polycrystalline semiconductor layers adjacent the amorphous semiconductor layers. The method includes interposing dielectric layers between the polycrystalline semiconductor layers and between the last amorphous semiconductor layer and the first polycrystalline semiconductor layer. The method includes forming a fine-grain polycrystalline semiconductor layer adjacent the polycrystalline semiconductor layers but is separated from the last polycrystalline semiconductor layer by an additional dielectric layer. The fine-grain polycrystalline semiconductor layer is formed at a higher temperature than the polycrystalline semiconductor layers and the amorphous semiconductor layers. A semiconductor device can be formed in another major surface of the semiconductor substrate.

Method of forming a multilayer structure for reducing defects in semiconductor devices and structure

At least one exemplary embodiment is directed to a method of forming a multilayered gettering structure that can be used to control wafer warpage.

Method of forming a gettering structure having reduced warpage and gettering a semiconductor wafer therewith

In one embodiment, a multi-layer extrinsic gettering structure includes plurality of polycrystalline semiconductor layers each separated by a dielectric layer.

Multilayer gettering structure for semiconductor device and method

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Zasova, Czechia

David Lysacek