Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

David Lu

Horng-Huei Tseng

Syun-Ming Jang Jang

Burn Jeng Lin

Ching-Yu Chang

Chin-Hsiang Lin

Shine Chung

Burn-Jeng Lin

Chien-Hung Lin

An anchored conductive damascene buried in a multi-density dielectric layer and method for forming the same, the anchored conductive damascene including a dielectric layer with an opening extending through a thickness of the dielectric layer; wherein the dielectric layer comprises at least one relatively higher density portion and a relatively lower density portion, the relatively lower density portion forming a contiguous major portion of the dielectric layer; and, wherein the opening in the relatively lower density portion has a lateral dimension relatively larger compared to the relatively higher density portion to form anchoring steps.

Anchored damascene structures

Disclosed is an objective lens adapted for use in liquid immersion photolithography and a method for making such a lens. In one example, the objective lens has multiple lens elements, one of which includes a transparent substrate and a layer of protective coating (PC). The PC is formed proximate to the transparent substrate and is positioned between a liquid used during the liquid immersion photolithography and the transparent substrate to protect the transparent substrate from the liquid.

Protective layer on objective lens for liquid immersion lithography applications

A lens cleaning module for a lithography system having an exposure apparatus including an objective lens is provided. The lens cleaning module includes a scanning stage for supporting a wafer beneath the objective lens. A cleaning module is provided adjacent to the scanning stage for cleaning the objective lens in a non-manual cleaning process.

Lens cleaning module for immersion lithography apparatus

Disclosed is an objective lens adapted for use in liquid immersion photolithography and a method for making such a lens. In one example, the objective lens has multiple lens elements, one of which includes a transparent substrate and a layer of anti-corrosion coating (ACC). The ACC is formed proximate to the transparent substrate and is positioned between a liquid used during the liquid immersion photolithography and the transparent substrate to protect the transparent substrate from the liquid.

Anti-corrosion layer on objective lens for liquid immersion lithography applications

A circuit and method are disclosed for reducing device mismatch due to trench isolation related stress. One or more extended active regions are formed on the substrate, wherein the active regions being extended from one or more ends thereof, and one or more operational devices are placed on one or more active regions, wherein the extended active region has at least a length twice as much as a distance between gates of two neighboring operational devices.

Device structures for reducing device mismatch due to shallow trench isolation induced oxides stresses

A supercritical fluid such as COcleans an opening formed in a Si-containing dielectric material and removes polymeric and organic residue produced by the etching process used to form the opening. The opening may be a contact, via or other opening and may include a cross-sectional area of less than 0.2 or 0.1 micron square. Atomic layer chemical vapor deposition (ALCVD) is used to form a thin barrier layer within the opening after the supercritical cleaning. A conductive material is formed over the barrier layer to provide a contact structure with improved contact resistance in VLSI devices.

Contact structure formed using supercritical cleaning fluid and ALCVD

A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Exposure method and apparatus for immersion lithography

A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer. An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

Growing community of inventors

Hsinchu, Taiwan

David Lu