Alliance for Sustainable Energy, LLC

Wisconsin Alumni Research Foundation

David Levi Young

Pauls Stradins

Aaron Joseph Ptak

John David Simon

William Michael Nemeth

Thomas Francis Kuech

Kevin Louis Schulte

Myles Aaron Steiner

Douglas R De La Torre

Matthew Robert Page

Vincenzo Anthony LaSalvia

Terrence Nevins

Caroline Lima Salles De Souza

Chad Augustine

Brian Egaas

Benjamin Guocian Lee

Henry Ellis Johnston, Jr

Brelon James May

The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.

Epitaxial alkali halide layers for III-V substrate recycling

The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.

Engineered nanostructured passivated contacts and method of making the same

In one aspect, the present disclosure implements a method that determines whether a submitted image satisfies a geographic constraint which includes defining a rule that establishes a geographic restriction on the submitted image, accessing a geo-code associated with the submitted image, determining whether the geo-code indicates that the submitted image was taken at a location that violates the geographic restriction defined in the rule, and if a determination is made that the submitted image was taken at a location that violates the geographic restriction defined in the rule, eliminating the submitted image from being considered a valid entry in the contest.

Network-based content submission and contest management

PolySi:Ga/SiOpassivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.

Doped passivated contacts

Methods and systems for thermal energy storage and enhanced oil recovery are described herein. In some embodiments, natural gas may be injected down a well which has been previously hydraulically fractured to store thermal energy and to stimulate the well to greater hydrocarbon production.

Compressed gas energy storage

Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Methods of forming interdigitated back contact solar cells

Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

Methods of forming interdigitated back contact layers

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 &#x3bc;m/minute.

High throughput semiconductor deposition system

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Passivated contact formation using ion implantation

An apparatus for measuring quantum efficiency (QE) of solar cells. The apparatus includes a light source including an array of light emitting diodes (LEDs) that each emit light corresponding to a differing portion of a test spectrum and each LED is driven by a sinusoidal power supply that operates at a unique frequency. The light source includes an optical coupling focusing the LED light into a test beam targeted on a solar cell, and a signal conditioner converts analog current signals generated by the solar cell into digital voltage signals. A QE measurement module determines a QE value corresponding to each of the LEDs based on the digital voltage signals using a Fast Fourier Transform module that processes the digital voltage signals to generate values for each operating frequency. The QE measurement module determines the QE values by applying a conversion factor to these values. Since all the LEDs can be power-modulated simultaneously and the corresponding cell responses to each of the LEDS can be analyzed simultaneously, the QE spectrum measurement time is greatly shortened as compared to conventional methods.

Growing community of inventors

Golden, CO, United States of America

David Levi Young