Qualcomm Mems Technologies, Inc.

Nanosys, Inc.

Novalux, Inc.

Qualcomm Incorporated

David Leslie Heald

Evgeni Petrovich Gousev

David P Stumbo

Xiangfeng Duan

J Wallace Parce

Chunming Niu

Jian Chen

Yaoling Pan

Bangalore Ramaswamiengar Natarajan

Ana Rangelova Londergan

Philip Don Floyd

Chao Liu

James Randolph Webster

Karen Chu Cruden

Rihui He

Linda T Romano

Robert S Dubrow

Erik C Scher

Calvin Y H Chow

Marc Mignard

Stephen A Empedocles

Jeffery A Whiteford

Lauren Palmateer

Kasra Khazeni

Jay L Goldman

Fan Zhong

Vijendra Sahi

Francesco Lemmi

Khurshid Syed Alam

James M Hamilton

George Pontis

Qi Luo

Chih-Wei Chiang

Thanh Nghia Tu

Sriram Akella

Calvin Y H Cho

James Harrison

Legardo Tardeo Reyes

Majorio Arafiles Rafanan

Yen Hua Lin

Lingling Wu

Chia Wei Yang

This disclosure provides systems, methods, and apparatus for treating a self-assembled monolayer coating on a dielectric layer to improve epoxy adhesion to the self-assembled monolayer coating. In implementations of the methods, a dielectric layer on a surface of a substrate is provided. A self-assembled monolayer coating is formed on the dielectric layer. A seal region of the self-assembled monolayer coating is selectively treated. A component is bonded to the seal region of the self-assembled monolayer coating with an epoxy. Implementations of the methods may be used to encapsulate an electromechanical systems device on the substrate with a cover using an epoxy.

Treatment of a self-assembled monolayer on a dielectric layer for improved epoxy adhesion

Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in proximity to the etching head in a manner that defines a flow path substantially parallel to the substrate face, and permits relative motion for the etching head to scan across the substrate.

Equipment and methods for etching of MEMS

A MEMS device may be package with a desiccant to provide a moisture-free environment. In order to avoid undesirable effects on the MEMS device, the desiccant may be selected or treated so as to be compatible with a particular MEMS device. This treatment may include baking of the desiccant to as to cause outgassing of moisture or other undesirable material. The structure of the MEMS device may also be altered to improve compatibility with particular desiccants.

Optimization of desiccant usage in a MEMS package

Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.

Eliminate release etch attack by interface modification in sacrificial layers

Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.

MEMS cavity-coating layers and methods

Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Methods and devices for forming nanostructure monolayers and devices including such monolayers

Disclosed is a microelectromechanical system (MEMS) device and method of manufacturing the same. In one aspect, MEMS such as an interferometric modulator include one or more elongated interior posts and support rails supporting a deformable reflective layer, where the elongated interior posts are entirely within an interferometric cavity and aligned parallel with the support rails. In another aspect, the interferometric modulator includes one or more elongated etch release holes formed in the deformable reflective layer and aligned parallel with channels formed in the deformable reflective layer defining parallel strips of the deformable reflective layer.

MEMS devices having improved uniformity and methods for making them

At least some subpixels in an interferometric modulator display are formed in a triangular shape. Such triangular subpixels may be formed and/or addressed in a variety of manners. At least some individual triangular subpixels may be separately addressable. However, a plurality of triangular subpixels may be addressable as a group, e.g., as a group of 2, 3, 4 or more. A single pixel may include varying numbers of triangular subpixels. For example, a single pixel may include 3, 6, 9, 12, 15, 18, 21 or some other number of triangular subpixels. Alternatively, a single pixel may include 4, 8, 12, 16, 20, or some other number of triangular subpixels. A single pixel may include triangular subpixels that are configured to be separately addressable and/or triangular subpixels are configured to be addressable as a group.

Interferometric modulation devices having triangular subpixels

Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.

Electromechanical device treatment with water vapor

A nanowire capacitor and methods of making the same are disclosed. The nanowire capacitor includes a subrate and a semiconductor nanowire that is supported by the substrate. An insulator is formed on a portion of the surface of the nanowire. Additionally, an outer coaxial conductor is formed on a portion insulator and a contact coupled to the nanowire.

Nanowire capacitor and methods of making same

Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

Nano-enabled memory devices and anisotropic charge carrying arrays

A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves may be used as a hard mask during the etching of these support structures. A resultant array of MEMS devices includes support structures having a face located at the edge of an overlying electrode and coincident with the edge of the overlying electrode.

Process and structure for fabrication of MEMS device having isolated edge posts

Growing community of inventors

San Jose, CA, United States of America

David Leslie Heald