Siemens Components, Inc.

Cyberswitchingpatents, LLC

Other

Infineon Technologies North America Corp.

Vishay Infrared Components, Inc.

Siemens Microelectronics Limited

David L Whitney

Manuel M Del Arroz

Lynn Wiese

Anthony V Souza

Richard A Blanchard

Liang Light Chen

Various embodiments for managing assets in a data center device rack include: establishing a data connection between a cabinet level controller and at least one primary power distribution unit (PDU); using a first electrical outlet on the primary PDU to establish an electrical connection between the primary PDU an electrical asset in a data center equipment rack; using a first asset interface connector on the cabinet level controller to establish a data connection between the cabinet level controller and the electrical asset in the data center equipment rack, the first electrical outlet and the first asset interface connector being in horizontal alignment; using a router integrated into the cabinet level controller to connect the cabinet level controller to a wide area Internet Protocol (IP) network; and using the router to establish a single IP address corresponding to a plurality of electrical assets in the data center equipment rack.

Cabinet level controller with asset management

Voltage clamping and level shifting is provided. A first reverse direction high-electron-mobility transistor includes a source connected to an input pad, and a drain connected to a first reference voltage. A second reverse direction high-electron-mobility transistor includes a source and a gate connected to a second reference voltage, and a drain connected to the input pad. A gate of the first reverse direction high-electron-mobility transistor is connected to the second reference voltage. Level shifting is provided by an arrangement of three high-electron-mobility transistor and a resistive element

Input protection and level shifter circuit

A circuit includes an output and a reverse direction high-electron-mobility transistor. The reverse direction high-electron-mobility transistor includes a drain connected to the output. The reverse direction high-electron-mobility transistor also includes a source and a gate. A transistor includes a source, a gate connected to a control pin and a drain connected to the gate of the reverse direction high-electron-mobility transistor.

Reverse direction high-electron-mobility transistor circuit

A flip-flop circuit includes two inverters and two transmission circuits. The two inverters and the two transmission circuits are implemented using reverse direction high-electron-mobility transistors.

Reverse direction high-electron-mobility logic devices

A logic gate includes at least one reverse direction high-electron-mobility transistor. The reverse direction high-electron-mobility transistor includes at least one source connected to a first reference voltage, at least one gate connected to an output, and at least one drain connected to the output. Logic implementing circuitry is connected between the output an additional reference voltage. The logic implementing circuitry includes a first transistor that includes a gate connected to a first input, and a second transistor that includes a gate connected to a second input.

Reverse direction high-electron-mobility logic gate

An enclosure for an energy monitoring current transformer includes upper housing that houses an upper transformer core section. Lower housing houses a transformer coil and a lower transformer core section. When the enclosure is assembled there is an overlap between the cap for the lower housing and the lower housing that lengthens a creepage path from the upper transformer core to the external surface of the enclosure.

Energy monitoring current transformer enclosure

An electrically-conductive grid placed between an LED and a photodiode prevents false triggers of the photodiode by transient electrical fields. The grid terminates the field but allows light output of the LED to pass to the photodiode.

Electrically-conductive grid shield for semiconductors

A semiconductor device and a method of modulating the conductivity of a DMOS transistor included in the device utilize photocurrent generated by a photodetector for minority-carrier injection. The injection of minority carriers into the DMOS transistor of the device reduces the on-resistance of the transistor. The semiconductor device may be used in an optocoupling application. In a first embodiment, the semiconductor device includes a lateral DMOS transistor, a minority-carrier injector, and a photodetector. In a preferred embodiment, the semiconductor device is an integrated device, such that the transistor, the injector and the photodetector are collectively formed on a single semiconductive substrate. The photodetector of the device includes at least one electrically isolated photodiode. As an example, the photodetector may include two dielectrically isolated photodiodes. The photodiodes are serially connected between the drain terminal of the transistor and the minority-carrier injector. The connection to the minority-carrier injector allows the photocurrent generated by the photodiodes to be transmitted to the injector to provide the current/voltage needed by the injector to introduce minority carriers into the transistor. The connection to the drain terminal ensures that the voltage applied to the injector, when the photodetector is generating photocurrent, is maintained at a higher voltage than the drain voltage applied to the drain terminal, even if the drain voltage is fluctuating. In a second embodiment, the semiconductor device includes a vertical DMOS transistor, instead of a lateral DMOS transistor.

Transistor with integrated photodetector for conductivity modulation

A data access arrangement (DAA) having a transhybrid circuit for separating a transmit signal from a received signal by providing a transmit cancellation signal to the inverting input of a servo-feedback differential amplifier on the receive channel of the DAA. The cancellation signal is provided by a photodiode optically coupleable with a light emitting diode within a optical isolator on the transmission channel of the DAA. The gain of the cancellation signal can be independently controlled.

Data access arrangement having improved transmit-receive separation

A monolithic optocoupler having a light emitting diode for emitting light, a first photodiode for producing a current based on light sensed by it, a second photodiode for producing a current based on light sensed by it and an insulator for electrically isolating the light emitting diode from the first photodiode. The insulator is substantially transparent to light emitted by the light emitting diode. The first and second photodiodes are positioned with respect to the light emitting diode such or that directional non-uniformities of light emitted by the light emitting diode are compensated.

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Saratoga, CA, United States of America

David L Whitney