Rohm & Haas Electronic Materials LLC

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Rohm and Haas Electronics Materials LLC

David L Thorsen

David Wayne Mosley

Kevin Calzia

Charles R Szmanda

Yi Guo

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions have excellent heat aging and shelf stability in the form of concentrates comprising a mixture of a compound containing two quaternary ammonium groups, such as hexabutyl C-Calkanediammonium dihydroxides or salts thereof, preferably N,N,N,N',N&#x2032;,N&#x2032;-hexabutyl-1,4-butanediammonium dihydroxide (HBBAH), and aminosilane group containing silica particles in the amount of from 1 to 30 wt. % or, preferably, from 15 to 22 wt. %, as solids based on the total weight of the composition, the composition having a pH ranging from 3 to 5 or, preferably, from 3.5 to 4.5 wherein the composition is stable against visible precipitation or sedimentation at a 15 wt. % solids content after heat aging at a temperature of 45&#xb0; C. for at least 6 days.

Aqueous compositions of stabilized aminosilane group containing silica particles

A method for depositing a Group 1b/gallium/(optional indium)/Group 6a material using a gallium formulated ink, comprising, as initial components: (a) a Group 1b/gallium/(optional indium)/Group 6a system which comprises a combination of, as initial components: a gallium component; a selenium component; an organic chalcogenide component; a Group 1b component comprising, as an initial component, at least one of CuCland CuO; optionally, a bidentate thiol component; optionally, an indium component; and, (b) a liquid carrier component; depositing the gallium formulated ink on the substrate; heating the deposited gallium formulated ink to eliminate the gallium carrier, the first liquid carrier, the second liquid carrier and the, optional, third liquid carrier leaving a Group 1b/gallium/(optional indium)/Group 6a material on the substrate; and, optionally, annealing the Group 1b/gallium/(optional indium)/Group 6a material.

Gallium formulated ink and methods of making and using same

A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; a carboxylic acid component having a formula R&#x2014;COOH, wherein R is selected from a Calkyl, Chaloalkyl and a Cmercaptoalkyl; a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.

Selenium/group 3A ink and methods of making and using same

A method for depositing gallium using a gallium ink, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; is provided comprising applying the gallium ink on the substrate; heating the applied gallium ink to eliminate the additive and the liquid carrier, depositing gallium on the substrate; and, optionally, annealing the deposited gallium.

Gallium ink and methods of making and using same

A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ&#x2014;Z'R&#x2032; and R&#x2014;SH, a Group 1b component and a liquid carrier; wherein Z and Z&#x2032; are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, Calkyl group, a Caryl group, a Calkylhydroxy group, an arylether group and an alkylether group; wherein R&#x2032; and Rare selected from a Calkyl group, a Caryl group, a Calkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Selenium/group 1B ink and methods of making and using same

A gallium ink is provided, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; wherein the gallium ink is a stable dispersion. Also provided are methods of preparing the gallium ink and for using the gallium ink in the preparation of semiconductor films (e.g., in the deposition of a CIGS layer for use in photovoltaic devices).

A gallium formulated ink is provided. Also provided are methods of preparing the gallium formulated ink and for using the gallium formulated ink to deposit a Group 1b/gallium/(optional indium)/Group 6a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.

A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ&#x2014;Z'R&#x2032; and R&#x2014;SH, a Group 1b component and a liquid carrier; wherein Z and Z&#x2032; are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, Calkyl group, a Caryl group, a Calkylhydroxy group, an arylether group and an alkylether group; wherein R&#x2032; and Rare selected from a Calkyl group, a Caryl group, a Calkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion. Also provided are methods of preparing the selenium/Group 1b ink and of using the selenium/Group 1b ink to deposit selenium and a Group 1b material on a substrate (preferably to deposit a MSematerial on a substrate for use in the manufacture of photovoltaic cells; wherein the mole ratio of M to selenium in the MSematerial deposited is tailorable; wherein M is at least one of copper and silver).

Selenium/group 1b ink and methods of making and using same

A selenium/Group Ib/Group 3a ink is provided, comprising, as initial components: (a) a selenium/Group Ib/Group 3a system which comprises a combination of, as initial components: a selenium; an organic chalcogenide component; a Group Ib containing substance; optionally, a bidentate thiol component; a Group 3a containing substance; and, (b) a liquid carrier component; wherein the selenium/Group Ib/Group 3a system is stably dispersed in the liquid carrier component. Also provided are methods of preparing the selenium/Group Ib/Group 3a ink and for using the selenium/Group Ib/Group 3a ink to deposit a selenium/Group Ib/Group 3a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.

Selenium/group 1b/group 3a ink and methods of making and using same

A selenium/Group 3ink, comprising (a) a selenium/Group 3complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ&#x2014;Z'R&#x2032; and R&#x2014;SH; wherein Z and Z&#x2032; are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, Calkyl group, a Caryl group, a Chydroxyalkyl group, an arylether group and an alkylether group; wherein R&#x2032; and Rare selected from a Calkyl group, a Caryl group, a Chydroxyalkyl group, an arylether group and an alkylether group; and, a Group 3complex, comprising at least one Group 3material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3complex is stably dispersed in the liquid carrier.

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Pitman, NJ, United States of America

David L Thorsen