Xactix, Inc.

Spts Technologies Limited

David L Springer

Kyle S Lebouitz

John J Neumann, Jr

In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.

Selective etching of semiconductor substrate(s) that preserves underlying dielectric layers

In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamberfrom which the atmosphere inside is evacuated. Etching gas is input into the main chamberfor a first period of time. Thereafter, the etching gas is evacuated from the main chamberand cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber. Desirably, the steps of inputting the etching gas into the main chamberfor the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamberfor the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Pulsed etching cooling

In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.

Pulsed-continuous etching

In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber () from which the atmosphere inside is evacuated. Etching gas is input into the main chamber () for a first period of time. Thereafter, the etching gas is evacuated from the main chamber () and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (). Desirably, the steps of inputting the etching gas into the main chamber () for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber () for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Growing community of inventors

Pittsburgh, PA, United States of America

David L Springer