Eastman-kodak Company

David L Peterson

John A Agostinelli

Jose M Mir

Gustavo R Paz-Pujalt

Gopalan Rajeswaran

Brian J Higberg

Gilbert Allan Hawkins

Keith B Kahen

James G Phalen

Lingadahalli G Shantharama

John P Shepherd

A depressed-index cladding ridge waveguide semiconductor laser diode includes a depressed-index cladding layer formed in the lower cladding region.

Ridge waveguide laser diode with a depressed-index cladding layer

A laser diode having an output facet and a back facet is placed in contact with a designated edge of a die and oriented such that said output facet is substantially parallel to said top surface of said die. At least one photodetector is fabricated on the dye top surface.

Laser diode and photodetector circuit assembly

A monolithic laser diode and monitor photodetector is disclosed wherein the photodetector is placed at a tilt angle .chi., within a predetermined range of tilt angles, with respect to the laser diode back facet. The predetermined range of tilt angles is selected according to the thickness and refractive index of the dielectric coating so as to reduce the susceptibility of the photodetector performance to variations in the dielectric coating deposited simultaneously on the output facet of the laser diode and the light collection surface of the photodetector and to significantly reduce the amount of the optical power reflected from the light collection surface of the photodetector onto the laser diode back facet.

Monolithic laser diode and monitor photodetector

Articles are disclosed in which an electrically conductive layer on a substrate exhibits a superconducting transition temperature in excess of 30.degree. K. Conductive layers are disclosed comprised of a crystalline rare earth alkaline earth copper oxide. Processes of preparing these articles are disclosed in which a mixed metal oxide precursor composition is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then heated to its crystallization temperature.

Conductive articles and processes for their preparation

There is disclosed herein a laser diode array including a plurality of laser diode bodies on a surface of a substrate. Each of the bodies has therein a semiconductor junction which is capable of generating light in the body when a suitable voltage is placed thereacross which junction extends to an end surface of the body. An end surface of each body is angled back under the body at an angle of 45.degree. with respect to the substrate surface and is reflective so that the light generated in the body is reflected by the end surface out of the body away from and substantially perpendicularly to the substrate. The bodies are arranged on the substrate with the angled end surfaces being adjacent to and facing each other so that the array provides a plurality of closely spaced, substantially parallel light beams emitted therefrom.

Multi-beam laser diode array

A metalorganic deposition method is disclosed for manufacturing a superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of O.sub.2 atmosphere.

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Pittsford, NY, United States of America

David L Peterson