International Business Machines Corporation

Other

David L Harmon

Son Van Nguyen

David M Dobuzinsky

John F Rembetski

Timothy Dooling Sullivan

Donald M Kenney

Michael D Armacost

Steven Alfred Grundon

Pai-Hung Pan

Jason Paul Gill

Nancy T Pascoe

Douglas J Dopp

Terence B Hook

Tue H Nguyen

Yun Shi

Michael Joseph Zierak

Natalie Barbara Feilchenfeld

Richard A Phelps

Alvin Wayne Strong

Deborah M Massey

Frederick Gustav Anderson

Henry A Bonges, Iii

Wing L Lai

Michael L Kerbaugh

Srinandan R Kasi

Junichi Furukawa

Robert Russell Robison

Kimball M Watson

Joseph M Lukaitis

Dustin Kenneth Slisher

Jeffrey H Sloan

Stewart E Rauch, Iii

Angela Spanger

A windshield light strip assembly includes a molding that has a channel integrated into the molding to receive an outer edge of a windshield on a motorcycle. A plurality of light emitters is each integrated into the molding and each of the light emitters emits light outwardly from the molding. The light emitters are spaced apart from each other and are distributed along a full length of the molding. A wiring harness is coupled to the molding and the wiring harness is electrically coupled to a power source comprising an electrical system of the motorcycle. Additionally, each of the light emitters is in electrical communication with the wiring harness and each of the light emitters is turned on when the motorcycle is turned on.

Windshield light strip assembly

A construction technique, for example for residential, light commercial and multifamily building construction, involving pre-fabricated elements. The elements include prefabricated structural components and prefabricated surface components. A technique of incremental building includes assembling a building structure using these pre-fabricated elements.

Architectural construction technique

Disclosed is a Zener diode having a scalable reverse-bias breakdown voltage (V) as a function of the position of a cathode contact region relative to the interface between adjacent cathode and anode well regions. Specifically, cathode and anode contact regions are positioned adjacent to corresponding cathode and anode well regions and are further separated by an isolation region. However, while the anode contact region is contained entirely within the anode well region, one end of the cathode contact region extends laterally into the anode well region. The length of this end can be predetermined in order to selectively adjust the Vof the diode (e.g., increasing the length reduces Vof the diode and vice versa). Also disclosed are an integrated circuit, incorporating multiple instances of the diode with different reverse-bias breakdown voltages, a method of forming the diode and a design structure for the diode.

Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode

Isolated Zener diode

A method of forming a semiconductor structure includes: forming a resistor over a substrate; forming at least one first contact in contact with the resistor; and forming at least one second contact in contact with the resistor. The resistor is structured and arranged such that current flows from the at least one first contact to the at least one second contact through a central portion of the resistor. The resistor includes at least one extension extending laterally outward from the central portion in a direction parallel to the current flow. The method includes sizing the at least one extension based on a thermal diffusion length of the resistor.

Thin film resistors and methods of manufacture

The present invention provides a micro-electro-mechanical-system (MEMS) temperature sensor that employs a suspended spiral comprising a material with a positive coefficient of thermal expansion. The thermal expansion of the suspended spiral is guided to by a set of guideposts to provide a linear movement of the free end of the suspended spiral, which is converted to an electrical signal by a set of conductive rotor azimuthal fins that are interdigitated with a set of conductive stator azimuthal fins by measuring the amount of capacitive coupling therebetween. Real time temperature may thus be measured through the in-situ measurement of the capacitive coupling. Optionally, the MEMS temperature sensor may have a ratchet and a pawl to enable ex-situ measurement.

Micro-electro-mechanical-system temperature sensor

Radiant heat floor panel

A padlock protector pouch that can be used to cover and protect a padlock, including a padlock body and a padlock shackle, and associated chain links of a chain that are locked together by the padlock without unlocking the padlock and removing the chain links therefrom. A locking system is also provided.

Quick action padlock protector pouch and chain locking systems

An electronic structure having wiring, and an associated method of designing the structure, for limiting a temperature gradient in the wiring. The electronic structure includes a substrate having a layer that includes a first and second wire which do not physically touch each other. The first and second wires are adapted to be at an elevated temperature due to Joule heating in relation to electrical current density in the first and second wires. The first wire is electrically and thermally coupled to the second wire by an electrically and thermally conductive structure that exists outside of the layer. The width of the second wire is tailored so as to limit a temperature gradient in the first wire to be below a threshold value that is predetermined to be sufficiently small so as to substantially mitigate adverse effects of electromigration in the first wire.

Enhancement of performance of a conductive wire in a multilayered substrate

Disclosed is a method and structure for altering an integrated circuit design having silicon over insulator (SOI) transistors. The method/structure prevents damage from charging during processing to the gate of SOI transistors by tracing electrical nets in the integrated circuit design, identifying SOI transistors that may have a voltage differential between the source/drain and gate as potentially damaged SOI transistors (based on the tracing of the electrical nets), and connecting a shunt device across the source/drain and the gate of each of the potentially damaged SOI transistors. Alternatively, the method/structure provides for connecting compensating conductors through a series device.

Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damage

A method and structure alters an integrated circuit design having silicon over insulator (SOI) transistors. The method/structure prevents damage from charging during processing to the gate of SOI transistors by tracing electrical nets in the integrated circuit design, identifying SOI transistors that have a voltage differential between the source/drain and gate as potentially damaged SOI transistors (based on the tracing of the electrical nets), and connecting a shunt device across the source/drain and the gate of each of the potentially damaged SOI transistors. Alternatively, the method/structure provides for connecting compensating conductors through a series device.

A holder for memorial material includes a display panel with a front and rear surface, and an upper ledge attached to the display panel. The display panel has between the front surface and the rear surface a material space for the memorial material. One can insert the memorial material into the internal material space inside the display panel. The upper ledge is adapted to receive downward pressure of a magnitude sufficient to drive the display panel at least partially underground. The display panel also has right and left converging edges to facilitate the at least partial underground burial.

Holder for and method for holding memorial material

A post-etch structure resulting in the inverse of a sidewall spacer etch, i.e. removal of the spacer. A vertical portion of a film is removed while leaving horizontal portions substantially intact. A facet is left in the film in register with an upper corner formed by the vertical and horizontal portions of the underlying body.

Selective removal of vertical portions of a film

A body is provided with a substantially horizontal surface and a substantially vertical surface. A film is formed on the body with a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface, and a corner region joining the substantially horizontal and substantially vertical portions. The corner region and the substantially vertical portion of the film are removed while the body and the substantially horizontal portion of the film are left substantially intact. A high density plasma with a fluorocarbon-based etching gas may be used to remove the vertical portion and corner region.

Growing community of inventors

Essex, VT, United States of America

David L Harmon