Rudolph Technologies, Inc.

Other

Tamar Technology, Inc.

Strasbaugh

David L Grant

David S Marx

William J Kalenian

Thomas E Brake

Rajiv Roy

Michael A Mahoney

Hanh Chu

Tsan Yuen Chan

A method for characterizing a microfabrication process and the product thereof is described. A substrate having TSV's formed therein is assessed by determining the geometries and positions of the top and bottom ends of a TSV. Individual TSV's as well as the entire pattern of TSV's formed in a substrate may be assessed.

Assessing alignment of top and bottom ends of TSVs and characterizing microfabrication process

A device () and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device () is comprised of a source/receiver section () having a broadband source (), a receiver () and a signal processing section (). An interferometer () separates or combines measurement and reference light and has a measurement leg () and a reference leg (), and a reference mirror (). The device () analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.

Wafer shape thickness and trench measurement

A system () for directly measuring the depth of a high aspect ratio etched feature on a wafer () that includes an etched surface () and a non-etched surface (). The system () utilizes an infrared reflectometer () that in a preferred embodiment includes a swept laser (), a fiber circulator (), a photodetector () and a combination collimator () and an objective lens (). From the objective lens () a focused incident light () is produced that is applied to the non-etched surface () of the wafer (). From the wafer () is produced a reflected light () that is processed through the reflectometer () and applied to an ADC () where a corresponding digital data signal () is produced. The digital data signal () is applied to a computer () that, in combination with software (), measures the depth of the etched feature that is then viewed on a display ().

System for directly measuring the depth of a high aspect ratio etched feature on a wafer

A method of grinding wafers includes determining thickness variations in a wafer; determining incremental adjustments to spindle alignment based on best fit predictions of wafer shaper; and implemented the incremental adjustments to spindle alignment of a grind module.

Methods and systems for use in grind shape control adaptation

A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.

Wafer measurement system and apparatus

A system for the measurement of high aspect ratio trenches. The preferred embodiment consists of three elements: a) an integrated microscope and optical height sensor, b) an axially dispersive, afocal lens system, which is included in the optical height sensor, and c) an algorithm for processing the optical height sensor data to produce the depth of the high aspect ratio trench. The present invention combines a traditional imaging microscope with a chromatic confocal, single point, height sensor. This combination instantaneously provides an image of the object and the height value at one point in the image. No mechanical movement is necessary anywhere in the system to achieve that result. The chromatic confocal height sensor is integrated with a traditional microscope through the use of separate wavelength bands such as a wavelength band in the visible part of the spectrum, and a wavelength band in the infrared or ultraviolet part of the spectrum.

Trench measurement system employing a chromatic confocal height sensor and a microscope

An apparatus and method of ascertaining the position of a core within a fiberoptic cable and calculating the position of the core relative to the cladding and jacket of the fiberoptic cable. The apparatus provides for observing of the end of the fiberoptic cable by using grazing incident illumination which causes the diameter of the core, the diameter of the cladding and the diameter of the jacket of the fiberoptic cable to be readily observed and then utilizing of a microscope and associated software to read the average diameter of the core and its position relative to the average diameter of the cladding and the average diameter of the jacket which will then make a determination as to how far off center the core is relative to the cladding and the jacket.

Concentricity measuring instrument for a fiberoptic cable end

A spike for track shoes is disclosed. The spike has a central section in a cylindrical configuration having a first enlarged exterior diameter. It also has an upper section in a generally cylindrical configuration extending upwardly from the central section with a threaded exterior face for removable attachment to and removable attachment from the track shoe of a wearer, the exterior diameter of the upper section being less than the exterior diameter of the central section. Lastly, a lower section is provided having an uppermost region with a generally circular cross-sectional configuration with an exterior diameter less than that of the central sections. The lower section also has an axis co-extensive with the central and upper sections and a lowermost region with a circular cross-sectional configuration. In addition, the lower section also has intermediate regions of varying diameters between the uppermost and lowermost regions, the intermediate regions having downwardly tapering generally cone-shaped lower edges. Lastly, the lower section also has two opposed planar sections extending downwardly on each side from the central section to an intermediate point thereof. Each spike is fabricated as a single piece from an ultra-lightweight ceramic material.

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Newbury Park, CA, United States of America

David L Grant