Kobe Steel Usa, Inc.

Lsi Corporation

Kobe Development Corp.

Agere Systems Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Kobe Steel USA Inc., Electronic Materials Center

David L Dreifus

Brian Rhys Stoner

Michelle L Hartsell

Koichi Miyata

Dean Michael Malta

Bradley A Fox

Brian Dennis McKean

Kimitsugu Saito

Robert Warren

Joseph S Holmes, Jr

Koji Kobashi

Jeffrey T Glass

Jesko A Von Windheim

Scott R Sahaida

Roy E Fauber

Alison J Tessmer

Joseph Michael Freund

Roger A Fratti

Kazushi Hayashi

Takeshi Tachibana

Vasudev Venkatesan

Glenn J Tessmer

Das Kalyankjumar

Robert B Henard

Gary A Ruggles

Hisasi Koyamao

Kumar Das

A semiconductor optical emitting device comprises an at least partially transparent substrate, an active semiconductor structure, a dielectric layer and a metal layer. The substrate comprises a first surface, a second surface and at least one sidewall. The active semiconductor structure comprises a first surface, a second surface and at least one sidewall, the first surface of the active semiconductor structure facing the second surface of the substrate. The dielectric layer surrounds at least a portion of the at least one sidewall of the active semiconductor structure. The metal layer surrounds at least a portion of the dielectric layer. The at least one sidewall of the active semiconductor structure is tapered and a first portion of the at least one sidewall of the active semiconductor structure has a different tapering than a second portion of the at least one sidewall of the active semiconductor structure.

Semiconductor optical emitting device with metallized sidewalls

Various embodiments of the present invention provide systems and methods for managing solid state drives. As an example, a storage system is described that include at least a first flash memory block and a second flash memory block, and a control circuit. The first flash memory block and the second flash memory block are addressable in the storage system. The control circuit is operable to identify the first flash memory block as partially failed, receive a write request directed to the first flash memory block; and direct the write request to the second flash memory block.

Systems and methods for managing end of life in a solid state drive

A method includes associating a spatially separate audio sensor and/or a vibration sensor with an audio processing system having one or more audio sensor(s) associated therewith. The spatially separate audio sensor is on a remote location distinct from that of the one or more audio sensor(s). The method also includes capturing information uniquely associated with an external environment of the audio processing system through the spatially separate audio sensor and/or the vibration sensor and the one or more audio sensor(s), and adapting an audio output of the audio processing system based on the captured information uniquely associated with the external environment thereof.

Utilizing information from a number of sensors to suppress acoustic noise through an audio processing system

A short range radio transmitter device includes a radio signal modulator and transmitter, a receiver and a controller coupled to the receiver. The controller and receiver operate to examine a frequency spectrum to select a transmission frequency for the radio signal modulator and transmitter. A receiver system for use with the transmitter includes a data channel service enabled receiver and a controller. The controller of the receiver system automatically tunes the data channel service enabled receiver to a frequency identified in a data channel service component of a received signal.

Short range FM modulator/transmitter and system incorporating same

Various embodiments of the present invention provide systems and methods for data storage. As an example, storage devices are disclosed that include a plurality of memory blocks, an unreliable block identification circuit, and a partial failure indication circuit. Each of the plurality of memory blocks includes a plurality of memory cells that decrease in reliability over time as they are accessed. The unreliable block identification circuit is operable to determine that one or more of the plurality of memory blocks is unreliable, and the partial failure indication circuit is operable to disallow write access to the plurality of memory blocks upon determination that an insufficient number of the plurality of memory blocks remain reliable.

Systems and methods for governing the life cycle of a solid state drive

The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.

Surface acoustic wave and bulk acoustic wave devices using a

A method for fabricating a microelectronic structure includes the steps of forming a semiconductor island on a substrate and forming a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a second semiconductor material and has a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be formed on the filler material.

Methods for fabricating microelectronic structures including

A microelectronic structure includes a substrate, a semiconductor island on the substrate, and a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a layer of a second semiconductor material having a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be provided on the filler material.

Microelectronic structures including semiconductor islands

Embedded IDT electrodes are provided in a multilayer structure consisting of a diamond layer on a substrate with IDT electrodes formed on the diamond and a very thin interlayer covering the interdigitated transducer structure and the diamond, thus embedding the IDT electrodes between the diamond layer and the interlayer, with a piezoelectric layer on the interlayer so that an acoustic surface wave propagates in the diamond layer. The very thin interlayer between the diamond and the piezoelectric layer greatly increases the uniformity of the piezoelectric layer but does not interfere with the acoustic properties of a SAW device.

Acoustic wave devices on diamond with an interlayer

A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.

Methods for forming smooth diamond-based mesa structures

Smooth diamond based mesa structures

A high frequency Surface Acoustic Wave (SAW) device includes a highly oriented diamond layer adjacent a piezoelectric layer. In one embodiment, laterally spaced apart piezoelectric layers or portions confine propagation of the wave within the diamond layer. Interdigitated electrodes may be provided by electrically conductive metal lines and/or by heavily doped surface portions of the diamond layer. Undesirable reflections may be reduced by providing the piezoelectric layer with opposing ends canted at an angle from orthogonal to the axis of surface acoustic wave propagation. The surface acoustic wave device may be used as a filter, amplifier, convolver, and phase shifter. Methods for making the surface acoustic wave device are also disclosed.

Diamond surface acoustic wave devices

A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate. A method for fabricating the nondiamond highly oriented textured diamond layer includes carburizing a face of the nondiamond substrate, nucleating the carburized face by electrical bias enhanced nucleation, and selectively growing diamond favoring growth of the (100)-oriented grains.

Methods of forming diamond semiconductor devices and layers on

A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides. By lightly doping the active region to a level below 1.times.10.sup.16 cm.sup.-3, relatively uniform device characteristics can be achieved over a wide temperature range extending from room temperature to 1000 K and above.

Growing community of inventors

Cary, NC, United States of America

David L Dreifus