Asm IP Holding B.v.

Asm International N.v.

Asm IP Holdings B.v.

David Kurt De Roest

Jan Willem Maes

Dieter Pierreux

Delphine Longrie

Qi Xie

Krzysztof Kamil Kachel

Chiyu Zhu

Timo Asikainen

Han Wang

Julian Hsieh

Timothee Blanquart

Tom E Blomberg

Michael Eugene Givens

Bert Jongbloed

Werner Knaepen

Raija H Matero

Hessel Sprey

Krzysztof Kachel

Linda Lindroos

Daniele Piumi

Kees Van Der Jeugd

Lucia D'Urzo

Oreste Madia

Harald Profijt

Ivan Zyulkov

Jacob Huffman Woodruff

Yoann Francis Tomczak

Ivo Johannes Raaijmakers

Marko J Tuominen

Ryu Nakano

Shaoren Deng

Yosuke Kimura

Zecheng Liu

Takashi Yoshida

Tatiana Ivanova

Anirudhan Chandrasekaran

Perttu Sippola

Yiting Sun

BokHeon Kim

Vincent Vandalon

YongGyu Han

The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

Method and apparatus for forming a patterned structure on a substrate

Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal-containing layer comprises oxygen and a metal.

Method of forming a structure and system for same

The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

Method of forming an enhanced unexposed photoresist layer

A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

Substrate processing apparatus and method

Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and Hplasma, a second Ar plasma and an etchant.

Selective deposition of SiOC thin films

Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

Structures and methods for use in photolithography

A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

Method for selectively depositing a metallic film on a substrate

A sequential infiltration synthesis apparatus comprising:

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Method of forming a photoresist underlayer and structure including same

The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising:

Method of forming a structure on a substrate

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Kessel-lo, Belgium

David Kurt De Roest