Entegris, Inc.

David Kuiper

Thomas H Baum

David M Ermert

Thomas M Cameron

Manish Khandelwal

Bryan Clark Hendrix

Philip S H Chen

Daniela White

Thomas J Coyne

Eric Condo

Susan Dimeo

Scott A Laneman

John M Cleary

Johathan W Dube

Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as HSiIand HSiI, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Method of preparing iodosilanes and compositions therefrom

Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Process for preparing organotin compounds

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Organotin precursor compounds

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing Oand NHco-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Vapor deposition precursor compounds and process of use

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Formulations for high selective silicon nitride etch

The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

Synthesis of fluoroalkyl tin precursors

Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula:SiI(NHR)&#x2550;SiI(NHR),wherein Ris selected from a C-Calkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4&#x2212;y.

Aminoiodosilanes and methods of synthesizing these aminoiodosilanes

Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.

Preparation of triiodosilanes

Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si&#x2014;H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

Triiodosilylamine precursor compounds

Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula:SiI(NHR)=SiI(NHR),wherein Ris selected from a C-Calkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4&#x2212;y.

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Brookfield, CT, United States of America

David Kuiper