Advanced Micro Devices Corporation

Nordson Corporation

Other

Genus, Inc.

David Keating Foote

Fei Wang

Minh Van Ngo

Bharath Rangarajan

William George En

Dawn M Hopper

Darin A Chan

James Donald Getty

Christopher F Lyons

Scott Allan Bell

Olov B Karlsson

Stephen Keetai Park

Steven K Park

Hideki Komori

Mark T Ramsbey

Subhash Gupta

Arvind Halliyal

Mark S Chang

George Jonathan Kluth

Jack F Thomas

Chih-Yuh Yang

Kenneth W Au

Henry Digregorio

Myron R Cagan

Sunil D Mehta

Nicholas H Tripsas

Raymond T Lee

Susan H Chen

Subash Gupta

James P Fazio

Gi Youl Kim

Jiangang Zhao

Ken Doering

Stephan Keetai Park

Mike Kubani

Chih-Yuk Yang

Apparatus and methods for simultaneously supporting multiple workpieces inside a processing space of a plasma processing system for simultaneous two-sided plasma processing. The apparatus may be a fixture having a carrier plate configured to be supported inside the processing space and a plurality of first openings extending through the thickness of the carrier plate. The carrier plate is configured to contact each of the workpieces over an annular region at an outer peripheral edge so that the first and second sides of each of the workpieces is exposed to the plasma through a respective one of said plurality of first openings.

Apparatus and methods for supporting workpieces during plasma processing

Methods and apparatus for applying a coating to an interior surface surrounding a passage of an article. A plasma is generated from a process gas inside the passage of the article, and the coating is deposited from the plasma on the interior surface. The article may optionally be placed inside of a passage of a conductive conduit. Either the article or the conductive conduit is coupled with a radio-frequency generator for generating the plasma inside the passage of the article.

Apparatus and method for intraluminal polymer deposition

Apparatus and methods for plasma processing workpieces of different diameters. The apparatus includes a lift plate having an outer perimeter, an opening inside of the outer perimeter, and a gap extending between the opening and the outer perimeter. The lift plate includes annular rims of different inner diameters and that are configured to respectively support the first and second workpieces.

Apparatus and methods for handling workpieces of different sizes

In an embodiment of the present invention, a method is provided for fabricating an electronics assembly having a substrate and a plurality of circuit elements. The method includes forming a liquid barrier on the substrate, placing a first circuit element on one side of the liquid barrier, and placing a second circuit element on the opposite side of the liquid barrier. A liquid is applied to the first circuit element. The method further includes using the liquid barrier to prevent the liquid applied to the first circuit element from contaminating the second circuit element so that the spacing between the first and second circuit elements can be minimized.

Methods of fabricating electronics assemblies

Syringes for holding fluids susceptible to void formation when the syringe and fluid are frozen and thawed before use. The interior surface of the syringe barrel is modified by exposure to a plasma such that the incidence of void formation in the fluid is prevented or, at the least, significantly reduced in comparison with conventional syringes.

Syringes with a reduced susceptibility to freeze-thaw void formation and methods of manufacturing such syringes

Methods of protecting a surface of a copper layer or a copper bonding pad on a semiconductor device against oxidation. A surface of the layer or bonding pad is cleaned by removing an oxidation layer with a plasma. A polymer layer is formed on the cleaned surface of the layer using a plasma-enhanced deposition process to protect the cleaned surface of the layer against exposure to an oxidizing gas.

Passivation layer for semiconductor device packaging

Wablet is a real time messaging platform that allows people to communicate with each other over the Internet. Unlike current methods of Internet communication, contact can be established and maintained without disclosing personal identity or permanent contact information such as an email address, IM handle, phone number or first and last name. Thus, communication can be undertaken without binding any user to any instant messaging system, and can be accessed over the web from any browser on any desktop platform without downloading or installing a client side application. In essence, Wablet acts as form of online calling card that allows instant communication from any web page, comment on a page, email signature, or URL. such that internet communication and contact with strangers is enabled by providing mechanisms to represent contextual online identity and reputation in the form of a digital caller ID that can be presented in order to initiate contact.

Access point object depositable on a web page and useful for initiating communication between depositing user and buddy

Cross IM group chat allows a host user to initiate a group conference between other users each registered on different chat systems (or not registered at all), as long as the host user is registered on each of the chat systems. Each user can participate in a semi-public chat that is viewable by the other participants of the chat, and private chats in which each participant can chat one on one with other participants in the group are also provided.

System and method for peer-to-peer internet communication

A heater assembly for an ALD or CVD reactor provides protection for an electrical conductor associated with a heating element by using a purge gas to isolate the conductor from the corrosive environment of the reactor chamber. The purge gas is introduced into a sleeve surrounding the conductor and from there is allowed to leak into the reactor chamber to be pumped out with the process gasses. This arrangement avoids the need for airtight seals at the junction of the sleeve and the heating element easing manufacturing requirements and potentially reducing component costs.

Purged heater-susceptor for an ALD/CVD reactor

An anti-reflective coating is formed between a material layer which is to be patterned on a semiconductor structure using photolithography, and an overlying photoresist layer. The anti-reflective coating suppresses reflections from the material layer surface into the photoresist layer that could degrade the patterning. The anti-reflective coating includes an anti-reflective layer of silicon oxime, silicon oxynitride, or silicon nitride, and a barrier layer which is grown on the anti-reflective layer using a nitrous oxide plasma discharge to convert a surface portion of the anti-reflective layer into silicon dioxide. The barrier layer prevents interaction between the anti-reflective layer and the photoresist layer that could create footing. The anti-reflective layer is deposited on the material layer using Plasma Enhanced Chemical Vapor Deposition (PECVD) in a reactor. The barrier layer is grown on the anti-reflective layer in-situ in the same reactor, thereby maximizing throughput.

Process for forming bottom anti-reflection coating for semiconductor fabrication photolithography which inhibits photoresist footing

A method for fabricating a semiconductor structure includes forming a masking pattern on an ONO layer, wherein the ONO layer is on a semiconductor substrate, forming pocket regions in the substrate with the masking pattern as a doping mask, etching the ONO layer with the masking pattern as an etching mask forming residual oxide regions, etching the ONO layer with a buffered oxide etch or a plasma etch exposing regions of the substrate, and removing the mask and forming a bit-line oxide layer on the exposed regions.

Bit-line oxidation by removing ONO oxide prior to bit-line implant

A process for fabricating a non-volatile memory device in which extraneous electrical charge is removed from charge-storage layers during fabrication includes exposing a charge-storage layer to infrared radiation prior to forming additional layers of the non-volatile memory cell. For example, in a memory cell incorporating a dielectric floating-gate electrode, such as silicon nitride, the infrared radiation exposure step is carried out after forming the floating-gate electrodes and prior to formation of the control-gate electrode. By exposing the charge-storage layer to infrared radiation prior to forming additional layers, extraneous electrical charge arising from previous processing steps can be efficiently removed from the floating-gate electrodes.

Process for fabricating a non-volatile memory device

A method for fabricating a semiconductor structure includes growing regions of oxide on a first structure, to form bit-line regions; wherein said semiconductor structure includes a semiconducting substrate, a patterned ONO layer on said substrate, wherein said patterned ONO layer comprises regions of ONO and exposed regions of said semiconducting substrate, a patterned hard mask layer on said regions of ONO, and a patterned photoresist layer on said patterned hard mask layer.

A process for fabricating a memory cell in a two-bit EEPROM device, the process includes forming an ONO layer overlying a semiconductor substrate, depositing a hard mask overlying the ONO layer, and patterning the hard mask. Preferably, the hard mask includes a material selected from the group consisting of tungsten, titanium, titanium nitride, polysilicon, silicon, silicon nitride, silicon oxi-nitride, and silicon rich nitride. In one preferred embodiment, the process further includes implanting the semiconductor substrate with a p-type dopant at an angle substantially normal to the principal surface of the semiconductor substrate and annealing the semiconductor substrate upon implanting the semiconductor substrate with a p-type dopant. In one preferred embodiment, the process further includes implanting the semiconductor substrate with an n-type dopant.

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San Jose, CA, United States of America

David Keating Foote