Jonker LLC

Progressant Technologies, Inc.

Adeia Semiconductor Bonding Technologies Inc.

Altera Corporation

Amic Technology Corporation

Other

Synopsys, Inc.

Progressent Technologies, Inc.

David K Y Liu

Tsu-Jae King

John Nicholas Gross

Raminda U Madurawe

Vei-Han Chan

Kou-Su Chen

An array of programmable non-volatile devices are is adapted such that their logic state is controllably altered over time by quiescent changes, slow controlled changes, scheduled changes, or some combination thereof imposed at a physical level. This allows for improved security and privacy for data to be permanently deleted. In some applications a data refresh and/or automatic backup can be implemented as well.

Ephemeral storage elements, circuits, and systems

An ephemeral peripheral system includes an ephemeral memory system and controller circuit for securing user data for a smartphone application. Different secure operating modes are provided for customizing user security requirements across end-to-end communications links, including in exchanges of electronic data between smartphone devices.

Ephemeral peripheral device

An ephemeral system includes an ephemeral communications device and associated ephemeral memory system (onboard or peripheral) for securing user data. Different secure operating modes are provided for customizing user security requirements across end-to-end communications links, including in exchanges of electronic data between smartphone devices.

Method of operating ephemeral peripheral device

A programmable non-volatile memory device effectuates two different functions (read, erase (re-program)) during a single instruction or command. During a first phase of the command a cell state is determined by a memory controller circuit, and in a second phase of the same command the cell state is re-written. This implementation is useful for applications where it is desirable to permit one time access only of particular data/content.

One time accessible (OTA) non-volatile memory

An array of programmable non-volatile devices, such as a nominal OTP cell, is adapted such that a Vrepresenting a particular binary logic state can be changed over time. This allows for re-programming and emulating a few times or multi-time programmable device.

Incrementally programmable non-volatile memory

An array of programmable non-volatile devices, such as a nominal OTP cell, is operated such that a Vrepresenting a particular binary logic state is changed over time. This allows for re-programming and emulating a few times or multi-time programmable device.

Method of operating incrementally programmable non-volatile memory

A non-volatile memory cell and array structure is disclosed situated within a high voltage region of an integrated circuit. The cell utilizes capacitive coupling based on an overlap between a gate and a drift region to impart a programming voltage. Programming is effectuated using a drain extension which can act to inject hot electrons. The cell can be operated as a one-time programmable (OTP) or multiple-time programmable (MTP) device. The fabrication of the cell relies on processing steps associated with high voltage devices, thus avoiding the need for additional masks, manufacturing steps, etc.

Zero cost NVM cell using high voltage devices in analog process

An electronic logic circuit uses areal capacitive coupling devices coupled together to process a set of data inputs. Each areal capacitive coupling device can be configured such that a floating gate potential of such device can be altered to at least a first state or a second state in response to receiving an input signal from the set of data inputs, which is coupled electrically to the floating gate. A majority function logic circuit (and other similar circuits) can be interconnected this way using far fewer gates than with a conventional CMOS implementation. Selective logic gates can also be enabled or disabled by configuring them effectively as memory devices.

Capacitively coupled logic gate

A programmable non-volatile configuration circuit uses a pair of non-volatile memory devices arranged in a pull-up and pull-down arrangement. The non-volatile memory devices have floating gates that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. The invention can be used in environments to store configuration data for programmable logic devices, field programmable arrays, and many other applications.

Non-volatile one-time-programmable and multiple-time programmable memory configuration circuit

A programmable non-volatile device is operated with a floating gate that functions as a FET gate that overlaps a portion of a source/drain region and allows for variable coupling through geometry and/or biasing conditions. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. Multi-state embodiments are also possible. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data

An array of programmable non-volatile devices use a floating gate that functions as a FET gate that overlaps a portion of a common source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

Growing community of inventors

Fremont, CA, United States of America

David K Y Liu