General Electric Company

David K Hartman

Mike F Chang

Harvey E Cline

Thomas R Anthony

Richard W Kennedy

Alfred Roesch

Henri B Assalit

A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.

Open tube aluminum oxide disc diffusion

A guard ring for processing a wafer of semiconductor material by thermal gradient zone melting has a beveled internal wall surface for supporting the wafer therein. The thickness of the guard ring is about twice the thickness of the wafer.

Guard ring for TGZM processing

A semiconductor device and method of manufacture therefor includes the establishment of at least one PN junction in a semiconductor chip through conventional techniques. Electrical contacts are formed. The entire semiconductor device is coated with a passivant coating having a first layer of low temperature silicon dioxide and a second layer of glass, the second layer of glass being applied in two steps.

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Manlius, NY, United States of America

David K Hartman