Semiconductor Components Industries, LLC

David K Briggs

Stephen P Robb

Alan Richard Ball

Suzanne Nee

In one embodiment, a power switch device () includes a first MOSFET deviceand a second MOSFET device (). A split gate structure () including a first gate electrode () controls the first MOSFET device (). A second gate electrode () controls the second MOSFET device (). A current limit device () is coupled to the first gate electrode () to turn on the first MOSFET device during a current limit mode. A comparator device () is coupled to the second gate electrode () to turn on the second MOSFET device () when the power switch device () is no longer in current limit mode.

Power switch structure with low RDSon and low current limit and method

An inrush current limiter circuit () includes a detection circuit () that produces a control signal (V) from a sense current (I). A power transistor responds to the control signal and has a source () coupled to an input node () to receive a supply voltage (ground) and a drain () for routing a load current (I) to an output node () as a protection signal (V). A sense transistor responds to the control signal and has a source scaled to the source of the power transistor and coupled to the input node to route a portion of the load current to the output node as the sense current.

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Glendale, AZ, United States of America

David K Briggs