International Business Machines Corporation

Infineon Technologies Ag

David K Anderson

Timothy Joseph Dalton

Christopher Vincent Jahnes

Kevin Shawn Petrarca

Richard Paul Volant

George Frederick Walker

Chandrasekhar Narayan

Tien-Jen Cheng

Andrew Lu

Hans-Joachim Barth

Henry Atkinson Nye, Iii

Douglas Wayne Kemerer

Joseph L Chan

Lloyd G Burrell

Emmanuel F Crabbe

A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.

Fuse structure and method to form the same

A semiconductor device () having support structures () beneath wirebond regions () of contact pads () and a method of forming same. Low modulus dielectric layers () are disposed over a workpiece (). Support structures () are formed in the low modulus dielectric layers (), and support vias () are formed between the support structures (). A high modulus dielectric film () is disposed between each low modulus dielectric layer (), and a high modulus dielectric layer () is disposed over the top low modulus dielectric layer (). Contact pads () are formed in the high modulus dielectric layer (). Each support via () within the low modulus dielectric layer () resides directly above a support via () in the underlying low modulus dielectric layer (), to form a plurality of via support stacks within the low modulus dielectric layers ().

Support structures for wirebond regions of contact pads over low modulus materials

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Poughkeepsie, NY, United States of America

David K Anderson