Motorola Corporation

Freescale Semiconductor,inc.

Nxp Usa, Inc.

David Joseph Monk

Bishnu Prasanna Gogoi

Lianjun Liu

Theresa A Maudie

Andrew C McNeil

William G McDonald

Robert H Reuss

Todd Frederick Miller

Christopher Paul Dragon

Gordon D Bitko

Babak A Taheri

Yizhen Lin

Philippe Lance

Gary G Li

Woo Tae Park

Jerry D Cripe

Gary J O'Brien

Kyujin Jung

Kuntal Joardar

Richard J August

Jenny M Ford

John E Schmiesing

Kun-Hin To

Michael P Menchio

Kenneth G Goldman

Dave S Mahadevan

Slobodan Petrovic

Donald L Hughes, Jr

Philippe Bernard Roland Lance

Pamela J Welch

Wen Ling M Huang

Carl Kyono

Charles L Reed, Sr

Mamur Chowdhury

Sushil Bharatan

Dennis M Stanerson

James E Kasarskis

James E Hannibal, Jr

K Sooriakumar

Wendy K Chan

Timothy S Savage

Kevin D Neumann

David W Odle

Song Woon Kim

Bill McDonald

James S Bates

Andrew C Mcneil

William G Mcdonald

In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.

Integrating diverse sensors in a single semiconductor device

An electric field sensor includes sense and reference cells. The sense cell produces a resistance that varies relative to an intensity of an electric field, and the reference cell produces a resistance that is invariable relative to the intensity of the electric field. An output signal indicative of the intensity of the electric field is determined using the difference between the resistances. A system includes an electric field source that outputs a digital test program as an electric field signal. The system further includes the electric field sensor formed with IC dies on a wafer. The electric field sensor receives the electric field signal. The received electric field signal is converted to the test program, and the test program is stored in memory on the wafer. The electric field source does not physically contact the dies, but can flood an entire surface of the wafer with the electric field signal.

Electric field sensor, system, and method for programming electronic devices on a wafer

A system for programming integrated circuit (IC) dies formed on a wafer includes an optical transmitter that outputs a digital test program as an optical signal. At least one optical sensor (e.g., photodiode) is formed with the IC dies on the wafer. The optical sensor detects and receives the optical signal. A processor formed on the wafer converts the optical signal to the digital test program and the digital test program is stored in memory on the wafer in association with one of the IC dies. The optical transmitter does not physically contact the dies, but can flood an entire surface of the wafer with the optical signal so that all of the IC dies are concurrently programmed with the digital test program.

Optical programming of electronic devices on a wafer

A microelectromechanical systems (MEMS) sensor device () includes a sensor portion () and a sensor portion () that are coupled together to form a vertically integrated configuration having a hermetically sealed chamber (). The sensor portions () can be formed utilizing different micromachining techniques, and are subsequently coupled utilizing a wafer bonding technique to form the sensor device (). The sensor portion () includes one or more sensors (), and the sensor portion () includes one or more sensors (). The sensors () are located inside the chamber () facing the sensors () also located inside the chamber (). The sensors () are configured to sense different physical stimuli, such as motion, pressure, and magnetic field.

Vertically integrated MEMS sensor device with multi-stimulus sensing

A transducer packageincludes a substratehaving a first axis of symmetryand a second axis of symmetryarranged orthogonal to the first axis of symmetry. At least a first sensorand a second sensoreach of which are symmetrically arranged on the substraterelative to one of the first and second axes of symmetryand.The first and second sensorsandare adapted to detect movement parallel to the other of the first and second axes of symmetryand. The first sensoris adapted to detect movement over a first sensing range and the second sensoris adapted to detect movement over a second sensing range, the second sensing range differing from the first sensing range.

Multiple axis transducer with multiple sensing range capability

A flowmeter is provided that comprises a leadframe assembly () and a body () disposed at least partially around the leadframe assembly (). The body () has a flow passage therethrough that comprises a first channel () having a first port (), a second channel () having a second port (), and a flow altering element () disposed within the second channel (). First and second pressure sensors (and) are disposed within the body () and coupled to the leadframe assembly () for measuring a first pressure within the first channel () and a second pressure within the second channel (), respectively. An integrated circuit (), which is coupled to the leadframe assembly (), to the first pressure sensor (), and to the second pressure sensor (), is configured to determine the rate of flow through the flow passage from the first pressure and the second pressure.

Method of using a differential pressure type flowmeter

Flowmeter and method for the making thereof

A structure that reduces signal cross-talk through the semiconductor substrate for System-On-Chip (SOC) () applications, thereby facilitating the integration of digital circuit blocks () and analog circuit blocks () onto a single IC. Cross-circuit interaction through a substrate () is reduced by strategically positioning the various digital circuit blocks () and analog circuit blocks () in an isolated wells (), (), () and () over a resistive substrate (). These well structures (), (), (), and () are then surrounded with a patterned low resistivity layer () and optional trench region (). The patterned low resistivity region () is formed below wells () and () and functions as a low resistance AC ground plane. This low resistivity region () collects noise signals that propagate between digital circuit blocks () and analog circuit blocks ().

Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications

A method for creating a MEMS structure is provided. In accordance with the method, a substrate () is provided having a sacrificial layer () disposed thereon and having a layer of silicon () disposed over the sacrificial layer. A first trench () is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region () enclosed by the first trench and a second region () exterior to the first trench. A first material () is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench () is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.

SOI polysilicon trench refill perimeter oxide anchor scheme

A component includes a housing ( ) at least partially defining a cavity ( ), a sensor element ( ) located in the cavity, and a support member ( ) located over the cavity, located over at least a portion of the housing, and having a hole ( ) over the cavity. The component also includes a filter ( ) located over the support member and located over the hole in the support member.

Component having a filter

A capacitive pressure sensor ( ) utilizes a diaphragm ( ) that is formed along with forming gates ( ) of active devices on the same semiconductor substrate ( ).

Method of forming an integrated CMOS capacitive pressure sensor

A semiconductor component comprises a substrate ( ), a two flexible pressure sensor diaphragms ( ) supported by the substrate ( ), and a fixed electrode ( ) between the two diaphragms ( ). The two diaphragms ( ) and the fixed electrode ( ) are electrodes of two differential capacitors. The substrate ( ) has a hole (601) extending from one surface ( ) of the substrate ( ) to an opposite surface ( ) of the substrate ( ). The hole ( ) is located underneath the two diaphragms ( ), and the hole ( ) at the opposite surfaces ( ) of the substrate ( ) is preferably larger than the hole ( ) at an interior portion of the substrate ( ).

Method of manufacturing a semiconductor component having a fixed electrode between two flexible diaphragms

Selective encapsulation of a micro electro-mechanical pressure sensor provides for protection of the wire bands ( ) through encapsulation while permitting the pressure sensor diaphragm ( ) to be exposed to ambient pressure without encumbrance or obstruction. Selective encapsulation is made possible by the construction of a protective dam ( ) around the outer perimeter of a pressure sensor diaphragm ( ) to form a wire bond cavity region between the protective dam ( ) and the device housing ( ). The wire bond cavity may be encapsulated with an encapsulation gel ( ) or by a vent cap ( ). Alternatively, the protective dam ( ) may be formed by a glass frit pattern ( ) bonding a cap wafer ( ) to a device wafer ( ) and then dicing the two-wafer combination into individual dies with protective dams attached.

Micro electro-mechanical system sensor with selective encapsulation and method therefor

A method of manufacturing a sensor includes forming a first electrode ( ), forming a sacrificial layer ( ) over the first electrode, and forming a layer ( ) over the sacrificial layer where a second electrode ( ) is located in the layer. The method further includes removing the sacrificial layer after forming the layer to form a cavity ( ) between the first and second electrodes and then sealing the cavity between the first and second electrodes. The layer is supported over the first electrode by a post ( ) in the cavity, and the second electrode is movable relative to the first electrode and is movable in response to a pressure external to the cavity.

Method of manufacturing a sensor

Growing community of inventors

Mesa, AZ, United States of America

David Joseph Monk