Amkor Technology, Inc.

Amkor Technology Singapore Holding Pte. Ltd.

Rf Micro Devices, Inc.

David Jon Hiner

Ronald Patrick Huemoeller

Michael G Kelly

Sukianto Rusli

Won Chul Do

Roger D St Amand

Russ Lie

Christopher J Berry

Ji Hun Lee

Waite R Warren, Jr

Doo Hyun Park

Kiwook Lee

Jin Young Khim

Nozad Karim

David Jandzinski

Richard Peter Sheridan

Frederick Evans Reed

Harry Donald McCaleb, Iii

Michael Harry DeVita, Jr

Donghoon Lee

Dohyung Kim

Curtis Michael Zwenger

Milind Shah

Thomas Scott Morris

Brett Arnold Dunlap

JungSoo Park

David Halchin

Donald Joseph Leahy

Ulrik Riis Madsen

Young Rae Kim

Sang Hyoun Lee

Brian D Sawyer

Corey Reichman

Brian Howard Calhoun

In Su Mok

Minho Chang

Suresh Jayaraman

Ju Hong Shin

Mark Charles Held

Kye Ryung Kim

Jae Yoon Kim

JiYoung Chung

DoHyun Na

SeungChul Han

JooHyun Kim

Methods and systems for a semiconductor package with high routing density routing patch are disclosed and may include a semiconductor die bonded to a substrate and a high routing density patch bonded to the substrate and to the semiconductor die, wherein the high routing density patch comprises a denser trace line density than the substrate. The high routing density patch can be a silicon-less-integrated module (SLIM) patch, comprising a BEOL portion, and can be TSV-less. Metal contacts may be formed on a second surface of the substrate. A second semiconductor die may be bonded to the substrate and to the high routing density patch. The high routing density patch may provide electrical interconnection between the semiconductor die. The substrate may be bonded to a silicon interposer. The high routing density patch may have a thickness of 10 microns or less. The substrate may have a thickness of 10 microns or less.

Semiconductor package with routing patch and method of fabricating the semiconductor package

A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.

Semiconductor package with front side and back side redistribution structures and fabricating method thereof

Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.

Semiconductor device package and manufacturing method thereof

Semiconductor package with routing patch and conductive interconnection structures laterally displaced from routing patch

A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Encapsulated semiconductor package

In one example, a semiconductor device can comprise a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure. The unit substrate can comprise a portion of a singulated subpanel substrate of a panel substrate. Other examples and related methods are also disclosed herein.

Semiconductor devices and methods of manufacturing semiconductor devices

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

Semiconductor package and fabricating method thereof

Semiconductor package with high routing density patch

Methods of manufacturing an encapsulated semiconductor device

Growing community of inventors

Chandler, AZ, United States of America

David Jon Hiner