The University of Southampton

Rockley Photonics Limited

Other

David John Thomson

Graham Trevor Reed

Frederic Yannick Gardes

Aaron John Zilkie

Martin Ebert

Weiwei Zhang

Guomin Yu

Thomas Pierre Schrans

Yi Zhang

Adam Scofield

Shinichi Saito

Lawrence G Watts

David Dowler

Sheghao Liu

Xia Chen

Milan Milosevic

Wei Wei Zhang

Robert Topley

Youfang Hu

Ke Li

Harold Meng Hoon Chong

Scott Ashley Reynolds

Shenghao Liu

An optical modulator. The optical modulator comprising: a micro-ring resonator; and a bus waveguide, including an input waveguide region, an output waveguide region, and a coupling waveguide region optically coupled to the micro-ring resonator and located between the input waveguide region and the output waveguide region. The micro-ring resonator includes a modulation region, the modulation region being formed of a silicon portion and a III-V semiconductor portion separated by a crystalline rare earth oxide dielectric layer.

Optical modulator

The invention provides a photonic chip comprising: a silicon substrate, an low refractive index layer above the silicon substrate, and a tapered waveguide above the low refractive index layer, the tapered waveguide having a first height at a first end of the tapered waveguide and a second height at a second end of the tapered waveguide, the second height being greater than the first height, and the tapered waveguide having a bottom surface that is closer to the substrate at the second end than at the first end. The invention further provides a method of manufacturing a photonic chip, the method comprising: providing a wafer comprising a silicon substrate, and an low refractive index layer above the silicon substrate, etching the low refractive index layer to form a tapered trench having a first height at a first end of the tapered trench and a second height at a second end of the tapered trench, the first second height being greater than the second first height, and the tapered trench having a bottom surface that is closer to the substrate at the first second end than at the second first end, and forming a tapered waveguide in the tapered trench.

Photonic chip and method of manufacture

A method of manufacturing a photonic chip. The method comprises providing a wafer comprising a silicon substrate, and a low refractive index layer above the silicon substrate, forming a first trench having a first height and a second trench having a second height by etching the low refractive index layer. The second height is greater than the first height and the second trench has a bottom surface that is closer to the substrate than a bottom surface of the first trench.

A resonator modulator for modulating light in a photonic circuit, the modulator comprising: a capacitor formed of a ring-shaped insulating region sandwiched between an outer conductive region and an inner conductive region, wherein at least one of the outer conductive regions or the inner conductive regions is a polycrystalline semiconductor material.

Capacitor resonator modulator

An optical modulation system comprises a signal source configured to generate an amplitude modulated electrical signal having a bandwidth and divided into frequency components comprising at least a first frequency component covering a first portion of the bandwidth and a second frequency component covering a second portion of the bandwidth; and an electro-optic modulator for receiving an input optical signal, the modulator having a first optical path and a second optical path, the input optical signal being divided between the first optical path and the second optical path and recombined after propagation along the first optical path and the second optical path to produce an output optical signal, and at least one of the first optical path and the second optical path comprising a phase shifter comprising a pair of electrodes in which each electrode is configured to receive a driving signal; wherein the or each phase shifter is coupled to the signal source to receive at least one of said frequency components as a driving signal for an electrode, and the phase shifters are arranged such that the or each phase shifter receives a different pair of driving signals.

Method and system for electro-optic modulation

The disclosure provides a method of forming an erasable optical coupler in a photonic device comprising a conventional optical waveguide formed in a crystalline wafer. The method comprises selectively implanting ions in a localized region of the wafer material adjacent to the conventional waveguide of the photonic device, to cause modification of the crystal lattice structure of, and a change in refractive index in, the ion implanted region of the wafer material to thereby form an ion implanted waveguide optically coupled to the adjacent conventional waveguide to couple light out therefrom, or in thereto. The crystalline wafer material and ion implanted waveguide are such that the crystal lattice structure or composition can be modified to adjust or remove the optical coupling with the conventional waveguide by further modification of the refractive index in the ion implanted region.

Erasable optical coupler

A discrete wavelength tunable laser capable of switching between a plurality of lasing channels of different wavelengths, the tunable laser comprising: a semiconductor optical amplifier (SOA); a wavelength demultiplexer (Demux), having a Demux input which receives the output from the SOA, and a plurality of Demux outputs, each Demux output defining a different spatial path for a respective lasing channel; each of the respective lasing channels being within the bandwidth of the SOA; a reflector located within each spatial path for reflecting light of the respective lasing channel; and a lasing suppression mechanism located within each lasing channel; wherein one or more desired lasing channels are selected by application of the lasing suppression mechanism in each spatial path other than the one or more spatial paths corresponding to the one or more desired lasing channels.

Tunable laser

A method of operating an optical modulator. The optical modulator having: a rib waveguide which includes a junction which is either a PIN or PN junction, the junction having a breakdown voltage. The method comprising: applying a reverse bias to the junction, so as to operate the optical modulator around the breakdown voltage of the junction; operating the modulator in an avalanche multiplication and/or band-to-band tunnelling mode by increasing the reverse bias past the breakdown voltage.

A method of trimming the refractive index of material forming at least part of one or more structures integrated in one or more pre-fabricated devices, the method comprising: implanting one or more first regions of material of one or more pre-fabricated devices, encompassing at least partially one or more device structures, with ions to alter the crystal form of the material within the one or more first regions and change the refractive index of the material within the one or more first regions; and heat treating one or more second regions of material of the one or more devices, encompassing at least partially the one or more first regions, to alter the crystal form of the material within the one or more first regions encompassed by the one or more second regions and change the refractive index thereof, thereby trimming the refractive index of the material of at least part of the one or more device structures, such that the one or more device structures provide one or more predetermined device outputs.

Trimming optical device structures

An optical demultiplexer/multiplexer, comprising: a multimode interference waveguide; at least one first coupling waveguide which meets the multimode interference waveguide at least one first location and a plurality of second coupling waveguides which meet the multimode interference waveguide at a plurality of second locations which are spaced in a direction of transmission in relation to the at least one first location, with the at least one first coupling waveguide and the second coupling waveguides together with the multimode interference waveguide providing a first angled multimode interferometer which operates to demultiplex a first optical signal having optical channels of a plurality of wavelengths or multiplex optical signals of a plurality of wavelengths into a first optical signal having optical channels of the plurality of wavelengths; at least one third coupling waveguide which meets the multimode interference waveguide at least one third location and a plurality of fourth coupling waveguides which meet the multimode interference waveguide at a plurality of fourth locations which are spaced in a direction of transmission in relation to the at least one third location, with the at least one third coupling waveguide and the plurality of fourth coupling waveguides together with the multimode interference waveguide providing a second angled multimode interferometer which operates to demultiplex a second optical signal having optical channels of a plurality of wavelengths or multiplex optical signals of a plurality of wavelengths into a second optical signal having optical channels of the plurality of wavelengths; whereby the demultiplexer/multiplexer provides for the demultiplexing/multiplexing of first and second optical signals having optical channels of a plurality of wavelengths. In a further embodiment the first coupling waveguide of an optical demultiplexer/multiplexer comprising a first angled multimode interferometer is stepped or tapered in order to couple a signal having a broadened spatial, or spectral, profile. In another embodiment of an optical demultiplexer/multiplexer comprising a first angled multimode interferometer a plurality of first coupling waveguides are coupled to a photonic structure which provides a plurality of output signals having substantially equal intensity and a phase difference, also in order to couple a signal or signals having a broadened spatial, or spectral, profile. In yet another embodiment of an optical demultiplexer/multiplexer comprising a first angled multimode interferometer the multimode interference waveguide includes a reflector at one end.

Optical (de)multiplexers

An electro-optic device, comprising a layer of light-carrying material; and a rib, projecting from the layer of light-carrying material, for guiding optical signals propagating through the device. The layer of light-carrying material comprises a first doped region of a first type extending into the rib, and a second doped region of a second, different type extending into the rib such that a pn junction is formed within the rib. The pn junction extends substantially parallel to at least two contiguous faces of the rib, resulting in a more efficient device. In addition, a self-aligned fabrication process can be used in order to simplify the fabrication process and increase reliability and yield.

Method for making electro-optical device

An electro-optic device, comprising an insulating layer and a layer light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.

Electro-optical device comprising a ridge waveguide and a PN junction and method of manufacturing said device

Apparatus comprising at least one optical device () optically coupled to at least one waveguide () on an optical chip (), characterized in that: (i) the optical device () is optically aligned with the waveguide () by aligning means (); (ii) the aligning means () comprises at least one male member () and at least one female () member which locate together; (iii) one of the male member () and the female member () is positioned on the optical chip (); (iv) the other one of the male member () and the female member () is positioned on a capping chip (); and (v) the apparatus includes a mirror () for reflecting light from the optical device () to the waveguide ().

Apparatus comprising at least one optical device optically coupled to at least one waveguide on an optical chip

Electro-optic PN junction modulator formed with a self-aligned process

An electro-optic device, comprising an insulating layer and a layer of light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.

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Southampton, United Kingdom

David John Thomson