Texas Instruments Corporation

Semtech Corporation

Triune Systems, LLC

David John Baldwin

Ross Eliot Teggatz

Joseph A Devore

Eric Christian Blackall

Brett Earl Forejt

Mayank Garg

James Allen Kohout

Tobin D Hagan

Sanmukh Makan Patel

Roy Clifton Jones, Iii

Kenneth George MacLean

Zbigniew Jan Lata

Brandon J Beckham

David Hernandez

Jonathan S Brodsky

John H Carpenter, Jr

Md Abidur Rahman

Timothy Patrick Pauletti

Robert Steinhoff

William E Grose

Alexander Noam Teutsch

Timothy John Legat

Jeff Berwick

Patrick Muggler

Marco Corsi

Andrew Marshall

Simon John Molloy

Amer H Atrash

David Alexander Grant

Petru Emanuel Stingu

Abidur Rahman

Patrick Peter Siniscalchi

Adam Lee Shook

Susan A Curtis

Suribhotla Rajasekhar

Reed Wilburn Adams

Ronnie A Bean

Rex M Teggatz

Justin Patrick Vogt

Wen Cai

Gary Eugene Daum

Tri Cao Nguyen

Paras M Dagli

Russell Max Kinder

Feng Hou

David Hernandez-Garduno

Gregory Charles Amidon

Juan F Alvarez

Christopher M Cooper

Katherine Frank

Boqiang Xiao

Chris Cooper

Hector X Roman

A system is disclosed that includes a wireless power receiver, a battery charging system coupled to the wireless power receiver and configured to charge a battery using power received from the wireless power receiver and a wireless data communication system coupled to the wireless power receiver and the battery charging system, the wireless data communication system configured to determine a power requirement and to transmit the power requirement using the wireless power receiver.

System for wireless power transmission and communication

Described example embodiments include an integrated circuit having a first channel area with a first FET formed in a semiconductor substrate, the substrate providing a contact to the drain. A second channel area includes a second FET formed in the semiconductor substrate. A pilot FET couples to the first FET in a current mirror configuration. A third FET has a conductivity opposite the first and second FETs and couples to the source of the pilot FET. An op amp includes an output coupled to the gate of the third FET. Signals from the drain of the second FET and the source of the pilot FET couple to the inverting input of the op amp. Signals from the source of the first FET and the drain of the first FET couple to the non-inverting input of the op amp. Methods and additional apparatus are disclosed.

Methods and apparatus for compensation and current spreading correction in shared drain multi-channel load switch

A switch controller, an isolated system incorporating an integrated circuit (IC) and a method of operating a power switch. In one embodiment, the IC includes: (1) a monolithic substrate, (2) a drive circuit supported by the monolithic substrate and configured to drive a power switch, (3) a diagnostics block supported by the monolithic substrate and configured to provide diagnostic signals indicating at least one attribute associated with the power switch and (4) a control block supported by the monolithic substrate and configured to drive the drive circuit in response to control signals developed based on the diagnostic signals.

Circuits and methods for providing power and data communication in isolated system architectures

A semiconductor device includes an output switching device having an input node, an output node, and a control input node. The control input node enables an input voltage applied to the input node to be switched to the output node. A gate pull-down circuit controls the control input node of the output switching device in response to at least one control signal. The gate pull-down circuit activates the output switching device by raising the voltage level of the control input node above the voltage level of the output node and deactivates the output switching device by clamping the control input node to the voltage level of the output node. A gate pull-up circuit receives an enable signal and generates the at least one control signal to the gate pull-down circuit in response to the enable signal.

Isolated output switching circuit

A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches.

Power FET with integrated sensors and method of manufacturing

An apparatus includes a motor driver configured to drive a motor across a pair of input terminals to the motor and a current sense unit configured to sense the motor's electrical current amplitude. Further, an angular frequency extractor is operatively coupled to the motor driver and the current sense unit and configured to detect discontinuities in the motor's electrical current amplitude. The angular frequency extractor also is configured to determine a time period for one complete revolution of a rotor of the motor and to generate a feedback signal based on the determined period to control an angular frequency of the motor. The feedback signal may be used to adjust how the motor is being driven (e.g., to slow the motor down or speed it up).

Angular frequency extractor for controlling a brushed DC motor

A switch includes a power transistor configured to switch an input voltage to a load. The switch further includes a charge pump and a duty cycle controller. The charge pump is coupled to the power transistor and includes an enable input to cause the charge pump to be turned on and off. The duty cycle controller is coupled to the charge pump and is configured to duty cycle the charge pump based on a comparison of a signal of a gate of the power transistor to a reference signal.

Duty cycle-controlled load switch

Circuits and methods for driving ERM motors are disclosed herein. An embodiment of the circuit includes an input, wherein an input signal is receivable at the input and a back EMF signal. The circuit operates in a closed loop mode when the back EMF signal is less than a lower threshold value and the difference between the value of the input signal and the back EMF signal indicates that the velocity of the motor needs to increase. The circuit operates in an open loop mode when the back EMF signal is greater than a high threshold value and the difference between the value of the input signal and the back EMF signal indicates that the velocity of the motor needs to increase.

Circuits and methods for driving eccentric rotating mass motors

A method for driving a Linear Resonant Actuator (LRA) is provided. During a first off interval, the back-emf of the LRA is measured. During a first off interval, a timer is started when the back-emf reaches a predetermined threshold, and after a predetermined delay has lapsed following the back-emf reaching the predetermined threshold during the first off interval, the LRA is driven over a drive interval having a length and drive strength. A second off interval is entered following the drive interval, and during the second off interval, the back-emf of the LRA is measured. During the second off interval, the timer is stopped when the back-emf reaches the predetermined threshold. The value from the timer that corresponds to the duration between the back-emf reaching the predetermined threshold during the first off interval and the back-emf reaching the predetermined threshold during the second off interval determines the length.

Method and apparatus to drive a linear resonant actuator at its resonant frequency

A method for driving a piezoelectric transducer is provided. An input signal is received. At least one of a plurality of modes is selected for a buck-boost stage from a comparison of a desired voltage on a capacitor to a first threshold and a second threshold, where the desired voltage is determined from the input signal. The piezoelectric transducer is then driven substantially within the audio band using the desired voltage on the capacitor using an H-bridge that changes state with each zero-crossing.

Driver for capacitive loads

The present disclosure provides a reference one time programmable (OTP) cell, wherein the reference OTP cell can generate a reference bias current in at least a programmed-on configuration; a current mirror coupled to an output of the OTP cell, wherein the current mirror includes at least two gate-coupled field effect transistors (FETs); wherein a current gain of a second of the two FETS is a fraction less than one of a first of the at least two gate-coupled FETs; a programmable OTP memory bit element (OTPMBE) coupled to an input of the current mirror; and a comparator having an input coupled to a node between the OTPMBE and the current mirror.

Reference and read OTP sensors

A high-voltage driver amplifier for piezo haptics comprises an input amplifier having a gain greater than one, a first amplifier of an amplifier pair coupled to an output of the input amplifier, a second amplifier of the amplifier pair coupled to the output of the input amplifier, a first impedance coupled between an output of the first amplifier of the amplifier pair and an input of the input amplifier, and a second impedance coupled between the output of the first amplifier of the amplifier pair coupled to an output of the second amplifier of the amplifier pair. A substantially capacitive load is coupled to the output of the second amplifier. The substantially capacitive load is a piezo-capacitance, wherein the piezo-capacitance is employed in haptics. The second impedance, a shunt impedance, allows for a feedback of output variations between the first amplifier and the second amplifier over the first impedance.

High voltage driver amplifier for piezo haptics

An apparatus and method are provided. Generally, an input signal is applied across a main path (through an input network) and across a cancellation path (through a cancellation circuit). The cancellation circuit subtracts a cancellation current from the main path as part of the control mechanism, where the magnitude of the cancellation current is based on a gain control signal (that has been linearized to follow a control voltage).

Variable gain amplifier

Traditionally, switching amplifiers (i.e., class-D and class-G) with negative supply rails had issues with direct current (DC) power loss, included large external capacitors, had a comparative reduction in efficiency, and oftentimes included separate power management circuits. Here, a class-D amplifier is provided with an output stage that provides negative supply voltages, positive supply voltages, and ground. Essentially, this amplifier provides some of the benefits of the conventional amplifiers without the drawbacks.

Single supply class-D amplifier

Growing community of inventors

Allen, TX, United States of America

David John Baldwin